Abstract:The carriers' mobility in 5d transition metal oxides‐based two‐dimensional electron systems is significantly hampered by the inevitable presence of defects. In order to overcome this challenge, ionic‐liquid gating at room temperature is applied to affect the oxygen vacancies and efficiently reduce any disorder at the interface. In this way, very high mobility of the amorphous LaAlO3/KTaO3 interface is demonstrated. Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin‐orbit coupling, 5d transition metal oxides‐based two‐dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high‐performance devices, in 5d‐oxides devices remains far behind their 3d‐oxides analogs. The carriers' mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, very high mobility (≈22 650 cm2 V−1 s−1) of 5d‐2DES confined at the LaAlO3/KTaO3 interface is reported. The high mobility, which is beyond the values observed in SrTiO3 2DESs in the same carrier‐density range, is achieved using the ionic‐liquid gating at room temperature. The authors postulate that the ionic‐liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back‐gate voltage, the authors reveal that the mobility follows the power‐law μ ∝ n1.2, indicating the very high quality of ionic‐liquid‐gated LaAlO3/KTaO3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high‐mobility electrons occupy the electronic sub‐bands emerging from the Ta:5d orbitals of KTaO3.

Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO<sub>3</sub> interface

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces.

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Two-dimensional superconductivity at the surfaces of KTaO<sub>3</sub> gated with ionic liquid

Two-dimensional superconductivity at the surfaces of KTaO3 gated with ionic liquid

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

Anisotropic Electronic Structure of the Two-Dimensional Electron Gas at the AlOx/KTaO3(110) interface

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Absence of Localized 5d1 Electrons in KTaO3 Interface Superconductors

The Spatial Distribution of Two Dimensional Electron Gas at the LaTiO3/KTaO3 Interface

The Effect of Fabrication Conditions on 2degs Transport Characteristics at Amorphous-Laalo3/ktao3 Interfaces

Two-Dimensional Superconductivity at the LaAlO_{3}/KTaO_{3}(110) Heterointerface.

Giant Tunability of Rashba Splitting at Cation-Exchanged Polar Oxide Interfaces by Selective Orbital Hybridization.

Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device

Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures.

Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO3 Based Two-Dimensional Electron Gas.

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Emergent Two-Band Conduction at Ti Delta-Doped LaAlO3/KTaO3 (111) Heterointerface

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases