Abstract:The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La0.3 Sr0.7 )(Al0.65 Ta0.35 )O3 /SrTiO3 (LSAT/SrTiO3 ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t2g band and shows a strong character of Ti 3dxy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Control of lectronic onduction at an xide eterointerface using olar dsorbates

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

Charge writing at the LaAlO3/SrTiO3 surface

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Tuning the Carrier Density of LaAlO3/SrTiO3 Interfaces by Capping La1−xSrxMnO3

Tuning Carrier Density at Complex Oxide Interface with Metallic Overlayer

Titanium D Xy Ferromagnetism at the LaAlO 3 / SrTiO 3 Interface

Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods

1 ( Supplementary Information ) Titanium dxy ferromagnetism at the LaAlO 3 / SrTiO 3 interface

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost