Abstract:The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.

Tuning Carrier Density at Complex Oxide Interface with Metallic Overlayer

Tuning the Carrier Density of LaAlO3/SrTiO3 Interfaces by Capping La1−xSrxMnO3

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Electric Field Control Of Superconductivity At The Laalo3/Ktao3(111) Interface

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Diluted Oxide Interfaces with Tunable Ground States

Tuning the Schottky Barrier Height at the Interfaces of Metals and Mixed Conductors

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Atomic-scale Structure and Electronic Property of the LaAlO3/TiO2 Interface

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating