Abstract:Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Patterning the Two Dimensional Electron Gas at the LaAlO3/SrTiO3 Interface by Structured Al Capping

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Formation of a Conducting LaAlO$_3$ / SrTiO$_3$ Interface Studied by Low Energy Electron Reflection During Growth

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

Reversible Formation of 2D Electron Gas at the LaFeO 3 /SrTiO 3 Interface via Control of Oxygen Vacancies.

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Electronic transport in sub-micrometric channels at the LaAlO$_{3}$/SrTiO$_{3}$ interface

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces

Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Tunable Electron-Electron Interactions in LaAlO3/SrTiO3 Nanostructures

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods