Abstract:We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 heterostructure slabs with three LaAlO3 overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the LaAlO3 overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the TiO2 interface layer cause drastic downshift of the 3d e_g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Photoelectric properties of two-dimensional electron gas at the (Ga0.5Al0.5)2O3/SrTiO3 heterointerfaces

Tuning LaAlO3 Lattice Structure by Growth Rate at the Picometer Scale in LaAlO3/SrTiO3 Heterostructures

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Titanium D Xy Ferromagnetism at the LaAlO 3 / SrTiO 3 Interface

Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces