Abstract:The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel {\gamma}-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.

Reversible Formation of 2D Electron Gas at the LaFeO 3 /SrTiO 3 Interface via Control of Oxygen Vacancies.

2D Electron Gas: Reversible Formation of 2D Electron Gas at the LaFeO3/SrTiO3 Interface via Control of Oxygen Vacancies (Adv. Mater. 10/2017)

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Two-dimensional electron gas at LaInO$_3$/BaSnO$_3$ interfaces controlled by a ferroelectric layer

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating.

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures

How ferroelectric BaTiO$_3$ can tune a two-dimensional electron gas at the interface of LaInO3 and BaSnO$_3$: a first-principles study

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Dynamic Interface Rearrangement in LaFeO$_3$ / $n$-SrTiO$_3$ Heterojunctions

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Tunability of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface by strain-induced ferroelectricity