Patterning the Two Dimensional Electron Gas at the LaAlO3/SrTiO3 Interface by Structured Al Capping

Y. Zhou,P. Wang,Z. Z. Luan,Y. J. Shi,S. W. Jiang,H. F. Ding,D. Wu
DOI: https://doi.org/10.1063/1.4979784
IF: 4
2017-01-01
Applied Physics Letters
Abstract:We demonstrate an approach for patterning a quasi-two dimensional electron gas (q-2DEG) at the interface of LaAlO3 (LAO) and SrTiO3 (STO) utilizing a structured Al capping layer. The capping of Al enables the formation of q-2DEG at the interface of 1–3 unit cells (uc) of LAO on STO, which was originally insulating before capping. The properties of the q-2DEG induced by the Al capping layer are essentially the same as those of q-2DEG without Al. Therefore, we can pattern q-2DEG by simply patterning the Al film on LAO (2 or 3 uc)/STO using a one-step liftoff process. Our approach circumvents the difficulty of direct patterning of oxide materials and provides a simple and robust patterning method for future device applications based on complex oxide interfaces.
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