Abstract:The emerging two-dimensional electron gas (2DEG) at the interface between polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) provides potential applications in low-dimensional nanoelectronic devices because of its exceptional electron transport property. To form 2DEG in the LAO/STO heterostructure (HS), a minimum thickness of approximately 4 unit cells of LAO is necessary. Herein, we modeled the n-type (TiO2)(0)/(LaO)(+1) HS by depositing (LAO)n (n = 4, 5, and 6) thin films on the STO substrate and explored strain effects on the critical thickness for forming 2DEG in the LAO/STO HS-based slab systems using first-principles electronic structure calculations. A vacuum layer was added along the [001] direction on the LAO film to resemble the actual epitaxial growth process of the materials. An insulator-to-metal transition is predicted in unstrained (LAO)n/STO systems when n ≥ 5. Our calculations indicate that O 2px/py states give rise to the surface conductivity, while Ti 3dxy states are responsible for the interfacial conductivity. For the tensilely strained HS system, an increased film thickness of LAO (n ≥ 6) is required to form the 2DEG, and a remarkable shift of O 2p orbitals toward higher energy in LAO layers is found, which is caused by the strain-induced change of the electrostatic potential. For the compressively strained HS system, the critical thickness of LAO film for forming 2DEG is between 5 and 6 unit cells of LAO. In addition, our calculations suggest that the interfacial charge carrier density and magnetic moment can be optimized when a moderate tensile strain is applied on the STO substrate in the ab-plane.

Stoichiometry and Termination Control of LaAlO 3 /SrTiO 3 Bilayer Interfaces

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces

Diluted Oxide Interfaces with Tunable Ground States

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Growth-Temperature Dependence of Conductivity at the LaCrO$_3$/SrTiO$_3$ (001) Interface

Interface creation on a mixed-terminated perovskite surface

Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy

Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO$_3$/SrTiO$_3$ and LaAlO$_3$/SrTiO$_3$ Interfaces

Dynamic Interface Rearrangement in LaFeO$_3$ / $n$-SrTiO$_3$ Heterojunctions

Tuning Conduction Mechanism Via Surface Termination and Point Defects in N-Type LaAlO3/SrTiO3 Interfaces

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Conductivity and photo-response of amorphous-LaAlO 3 /SrTiO 3 (001) grown by on-axis radio-frequency magnetron sputtering

Inevitable high density of oxygen vacancies on the surface of LaAlO3/SrTiO3 heterostructures

Modulating Spin Polarization and Spin-Orbit Interaction by Submonolayer Engineering at Interfaces

First-principles characterization of the critical thickness for forming metallic states in strained LaAlO₃/SrTiO₃(001) heterostructure

Surface Termination and Stoichiometry of LaAlO3(001) Surface Studied by HRTEM

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods