Abstract:Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Non-universal Current Flow Near the Metal-Insulator Transition in an Oxide Interface

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

The density and disorder tuned superconductor-metal transition in two dimensions

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Electric Field Control Of Superconductivity At The Laalo3/Ktao3(111) Interface

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Room-Temperature Electronically-Controlled Ferromagnetism at the LaAlO3/SrTiO3 Interface

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

A Universal Critical Density Underlying the Physics of Electrons at the LaAlO3/SrTiO3 Interface

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces