Abstract:To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted Nb/Al-AlOx/Nb JJs and kinetic inductors. The process has a layer of JJs, a layer of resistors, and 10 fully planarized superconducting layers: 8 Nb layers and 2 layers of high kinetic inductance materials, Mo$_2$N and NbN, with sheet inductance of 8 pH/sq and 3 pH/sq, respectively. NbN films were deposited by two methods: with $T_c$=15.5 K by reactive sputtering of a Nb target in Ar+N$_2$ mixture; with $T_c$ in the range from 9 K to 13 K by plasma-enhanced chemical vapor deposition (PECVD) using Tris(diethylamido)(tert-butylimido)niobium(V) metalorganic precursor. PECVD of NbN was investigated to obtain conformal deposition and filling narrow trenches and vias with high depth-to-width ratios, which was not possible to achieve using sputtering and other physical vapor deposition (PVD) methods at temperatures below $200 ^oC$ required to prevent degradation of Nb/Al-AlOx/Nb junctions. Nb layers with 200 nm thickness are used in the process layer stack as ground planes to maintain a high level of interlayer shielding and low intralayer mutual coupling, for passive transmission lines with wave impedances matching impedances of JJs, typically <=50 $\Omega$, and for low-value inductors. NbN and NbN/Nb bilayer are used for cell inductors. Using NbN/Nb bilayers and individual pattering of both layers to form inductors allowed us to minimize parasitic kinetic inductance associated with interlayer vias and connections to JJs as well as to increase critical currents of the vias. Fabrication details and results of electrical characterization of NbN films, wires, and vias, and comparison with Nb properties are given.

A thermostable trilayer resist for niobium lift-off

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

Niobium-based superconducting nano-devices fabrication using all-metal suspended masks

Symbiotic Optimization of the Nanolithography and RF-Plasma Etching for Fabricating High-Quality Light-Sensitive Superconductors on the 50 nm Scale

Single electron transistors with high quality superconducting niobium islands

Fabrication and surface treatment of electron-beam evaporated niobium for low-loss coplanar waveguide resonators

Fabrication of mesoscopic Nb wires using conventional e-beam lithographic techniques

Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

Improvement and protection of niobium surface superconductivity by atomic layer deposition and heat treatment

Progress toward superconductor electronics fabrication process with planarized NbN and NbN/Nb layers

Pure niobium manufactured by Laser-Based Powder Bed Fusion: influence of process parameters and supports on as-built surface quality

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation

Improved coherence in optically defined niobium trilayer-junction qubits

The effect of niobium thin film structure on losses in superconducting circuits

Improved Coherence in Optically-Defined Niobium Trilayer Junction Qubits

Coulomb blockade effects in anodised niobium nanostructures

Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

In-situ Synchrotron X-Ray Photoelectron Spectroscopy Study of Medium-Temperature Baking of Niobium for SRF Application

Fabrication and Radio Frequency Test of Large-Area MgB2 Films on Niobium Substrates