Abstract:To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted Nb/Al-AlOx/Nb JJs and kinetic inductors. The process has a layer of JJs, a layer of resistors, and 10 fully planarized superconducting layers: 8 Nb layers and 2 layers of high kinetic inductance materials, Mo$_2$N and NbN, with sheet inductance of 8 pH/sq and 3 pH/sq, respectively. NbN films were deposited by two methods: with $T_c$=15.5 K by reactive sputtering of a Nb target in Ar+N$_2$ mixture; with $T_c$ in the range from 9 K to 13 K by plasma-enhanced chemical vapor deposition (PECVD) using Tris(diethylamido)(tert-butylimido)niobium(V) metalorganic precursor. PECVD of NbN was investigated to obtain conformal deposition and filling narrow trenches and vias with high depth-to-width ratios, which was not possible to achieve using sputtering and other physical vapor deposition (PVD) methods at temperatures below $200 ^oC$ required to prevent degradation of Nb/Al-AlOx/Nb junctions. Nb layers with 200 nm thickness are used in the process layer stack as ground planes to maintain a high level of interlayer shielding and low intralayer mutual coupling, for passive transmission lines with wave impedances matching impedances of JJs, typically <=50 $\Omega$, and for low-value inductors. NbN and NbN/Nb bilayer are used for cell inductors. Using NbN/Nb bilayers and individual pattering of both layers to form inductors allowed us to minimize parasitic kinetic inductance associated with interlayer vias and connections to JJs as well as to increase critical currents of the vias. Fabrication details and results of electrical characterization of NbN films, wires, and vias, and comparison with Nb properties are given.

Niobium-based superconducting nano-devices fabrication using all-metal suspended masks

Symbiotic Optimization of the Nanolithography and RF-Plasma Etching for Fabricating High-Quality Light-Sensitive Superconductors on the 50 nm Scale

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

Fabrication of superconducting nanowires based on ultra-thin Nb films by means of nanoimprint lithography

Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Suspended Multiwalled Carbon Nanotubes As Self-Aligned Evaporation Masks.

Single-crystal Superconducting Nanowires of NbSe2 Fabricated by Reactive Plasma Etching

Large-area superconducting nanowires fabricated based on laser exposure on photoresist

A thermostable trilayer resist for niobium lift-off

Niobium Nitride Preparation for Superconducting Single-Photon Detectors

Mask-free, vacuum-free fabrication of high-conductivity metallic nanowire by spatially shaped ultrafast laser (Conference Presentation)

Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals

Single electron transistors with high quality superconducting niobium islands

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

Fabrication and Characterisation of Embedded Metal Nanostructures by Ion Implantation with Nanoporous Anodic Alumina Masks

Versatile Fabrication of Self-Aligned Nanoscale Hall Devices Using Nanowire Masks.

Development of Multi-Layer Fabrication Process for SFQ Large Scale Integrated Digital Circuits

Progress toward superconductor electronics fabrication process with planarized NbN and NbN/Nb layers

Fabrication of mesoscopic Nb wires using conventional e-beam lithographic techniques

Superconducting Nanowire Fabrication on Niobium Nitride using Helium Ion Irradiation

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films