Abstract:Metal nanowire fabrication has drawn tremendous attention in recent years due to its wide application in electronics, optoelectronics, and plasmonics. However, conventional laser fabrication technologies are limited by diffraction limit thus the fabrication resolution cannot meet the increasingly high demand of modern devices. Herein we report on a novel method for high-resolution high-quality metal nanowire fabrication by using Hermite-Gaussian beam to ablate metal thin film. The nanowire is formed due to the intensity valley in the center of the laser beam while the surrounding film is ablated. Arbitrary nanowire can be generated on the substrate by dynamically adjusting the orientation of the intensity valley. This method shows obvious advantages compared to conventional methods. First, the minimum nanowire has a width of ~60 nm (≈1/13 of the laser wavelength), which is much smaller than the diffraction limit. The high resolution is achieved by combining the ultrashort nature of the femtosecond laser and the low thermal conductivity of the thin film. In addition, the fabricated nanowires have good inside qualities. No inner nanopores and particle intervals are generated inside the nanowire, thus endowing the nanowire with good electronic characteristics: the conductivity of the nanowires is as high as 1.2×10 7 S/m (≈1/4 of buck material), and the maximum current density is up to 1.66×10 8 A/m 2 . Last, the nanowire has a good adhesion to the substrates, which can withstand ultrasonic bath for a long time. These advantages make our method a good approach for high-resolution high-quality nanowire fabrication as a complementary method to conventional lithography methods.

Large-area superconducting nanowires fabricated based on laser exposure on photoresist

High Throughput Laser Nano Direct Writing Technique

Optical Control with Large-Scale Assembly of Highly Aligned Silver Nanowires

Peripheral-photoinhibition-based Direct Laser Writing with Isotropic 30 Nm Feature Size Using a Pseudo 3D Hollow Focus

Photolithography Using Lateral Surface of Nanofibers

Thermal excitation-induced micro/nano fabrication and material modification of superconducting Nb films

Fabrication of superconducting nanowires based on ultra-thin Nb films by means of nanoimprint lithography

Mask-free, vacuum-free fabrication of high-conductivity metallic nanowire by spatially shaped ultrafast laser (Conference Presentation)

Fabrication of Metal Nano-Wires by Laser Interference Lithography Using a Tri-Layer Resist Process

Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

5 Nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography.

Laser-induced Single Point Nanowelding of Silver Nanowires

Far‐Field Parallel Direct Writing of Sub‐Diffraction‐Limit Metallic Nanowires by Spatially Modulated Femtosecond Vector Beam

Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist

Symbiotic Optimization of the Nanolithography and RF-Plasma Etching for Fabricating High-Quality Light-Sensitive Superconductors on the 50 nm Scale

Fabrication of Superconducting NbN Meander Nanowires by Nano-Imprint Lithography

Optimization of high-quality YBa2Cu3O7-δ superconducting nanowire fabrication by post-thermal annealing

Minimal lateral damage fabrication of high-temperature superconducting nanowires via focused helium ion beam irradiation

Large-area Superconducting Micro-wire Single-photon Detectors Prepared by Laser Direct Writing Lithography

Local Anodic Oxidation of Superconducting NbN Thin Films by an Atomic Force Microscope

Laser-lithographically written micron-wide superconducting nanowire single-photon detectors