Abstract:Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk & beta;-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The I-on for HP has a maximum of 3060 & mu;A & mu;m(-1) at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Applications of Cubic MgZnO Thin Films in Metal–Insulator–Silicon Structures

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer.

Fabrication Of Ni-Nio-Cu Metal-Insulator-Metal Tunnel Diodes Via Anodic Aluminum Oxide Templates

Readily Accessible Metallic Micro Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Evaluation of Nd–Al Doped Indium-Zinc Oxide Thin-Film Transistors by a Μ-Pcd Method

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

A High Performance Bi-Directional Super-MIM Diode with Symmetrical and Shift-Free I-V Characteristics

Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Lateral diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Applications of Cubic MgZnO Thin Films in Metal–Insulator–Silicon Structures

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer.

Fabrication Of Ni-Nio-Cu Metal-Insulator-Metal Tunnel Diodes Via Anodic Aluminum Oxide Templates

Readily Accessible Metallic Micro Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Evaluation of Nd–Al Doped Indium-Zinc Oxide Thin-Film Transistors by a Μ-Pcd Method

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

A High Performance Bi-Directional Super-MIM Diode with Symmetrical and Shift-Free I-V Characteristics

Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Lateral diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO

Property of an AlGaN/GaN MIS Diode with Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Bilayer Gate Dielectric Films

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films