Abstract:The dual‐functionality of molybdenum hexafluoride (MoF6) is utilized for dual‐material area‐selective deposition (ASD). Mo atomic layer deposition (ALD) using MoF6 and 1 wt% silane creates Mo ASD on hydrogen‐terminated Si versus hydroxylated SiO2 (SiO2‒OH), while SiO2‒OH is simultaneously fluorinated by MoF6. Subsequent ZnO and TiO2 ALD are inhibited on the fluorine‐passivated SiO2, resulting in self‐aligned Mo/metal oxide nanoribbons. Area‐selective deposition (ASD) is a forefront nanopatterning technique gaining substantial attention in the semiconductor industry. While current research primarily addresses single‐material ASD, exploring multi‐material ASD is essential for mitigating complexity in advanced nanopatterning. This study describes molybdenum hexafluoride (MoF6)‐mediated fluorination/passivation of the hydroxylated SiO2 (SiO2‒OH) at 250 °C as a new method to pacify nucleation during subsequent ZnO and TiO2 atomic layer deposition (ALD). In contrast, Al2O3 ALD is not passivated on the fluorinated SiO2 (SiO2‒F). The study further shows that Mo ALD using MoF6 and silane (1 wt% SiH4 in Ar) selectively proceeds on hydrogen‐terminated Si (Si‒H), whereas SiO2‒OH becomes fluorine‐passivated without observable Mo deposition. This enables subsequent ZnO and TiO2 ASD on Mo versus SiO2‒F, as confirmed by X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM). Proposed growth and inhibition mechanisms highlight the importance of the metal oxide precursor in achieving selectivity. Taken together, self‐aligned Mo/ZnO and Mo/TiO2 nanoribbons are demonstrated on coplanar nanoscale Si‒H/SiO2‒OH patterns by sequentially integrating two individual ASD processes: 1) Mo ASD on Si‒H versus SiO2‒OH; and 2) ZnO or TiO2 ASD on Mo versus SiO2‒F. This work highlights the potential for this approach in new ASD systems.

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Self-assembled Monolayer Resist for Atomic Layer Deposition of HfO2 and ZrO2 High-Κ Gate Dielectrics

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Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition