Origins of sulphate in Antarctic dry-valley soils as deduced from anomalous 17O compositions

H. Bao,D. Campbell,J. Bockheim,M. Thiemens

DOI: https://doi.org/10.1038/35035054

IF: 64.8

2000-09-28

Nature

Abstract:

What problem does this paper attempt to address?

(Invited) Area-Selective Atomic Layer Deposition of Manganese Oxides on Metal−Dielectric Patterns

Yicheng Li,Kun Cao,Rong Chen

DOI: https://doi.org/10.1149/ma2020-02231660mtgabs

2020-01-01

Abstract:Area-selective atomic layer deposition (ALD) is a kind of high-precision deposition technologies where it happens only on designed areas. It is a very promising technology for scaling-down of nanodevices because of the characteristics of sub-nanoscale thickness control and bottom-up self-alignment. In this work, we report inherently selective ALD of MnOx on Pt/SiO2 substrates by adjusting the ALD processes parameters. Mn precursors with different ligands are introduced, namely Mn(thd)3 and Mn(EtCp)2. Through temperature and precursor pulse etc. regulation, an appropriate selective process windows are approached. During the first few ALD cycles, there is a nucleation delay on SiO2 surface, while it grows linearly on metal surface. The results of selectivity may come from the active oxygen on the platinum surface which promoted the reaction, while the dielectric surface has a nucleation delay. Through first-principles calculation, the reaction path and energy barrier are analyzed to explain the selective growth. The study broadens the family of selective deposition and provides guidance for specific applications, such as integrated circuits, optoelectronic devices, etc. Figure 1
Modification of High-Surface-Area Carbons Using Self-Limited Atomic Layer Deposition

Mengjie Fan,Kai Shen,Raymond J. Gorte,John M. Vohs

DOI: https://doi.org/10.3390/catal14110786

IF: 3.9

2024-11-06

Catalysts

Abstract:This study explores the application of Atomic Layer Deposition (ALD) to functionalize high-surface-area carbon supports with metal and metal oxide films and particles for applications in catalysis and electrocatalysis. The work reported here demonstrates that, through careful choice of precursors and absorption and reaction conditions, self-limited ALD growth on a high-surface-area carbon support can be achieved. Specific examples presented include the growth of conformal films of ZrO2 and SnO2 and the deposition of Ga2O3 and Pt particles on a carbon black support with a surface area of 250 m2·g−1. A novel strategy for controlling the Pt weight loading and producing sub-nanometer Pt particles on a carbon support using a single ALD cycle is also presented.

chemistry, physical
Increased selectivity in area-selective ALD by combining nucleation enhancement and SAM-based inhibition

Camila de Paula,Dara Bobb-Semple,Stacey F. Bent

DOI: https://doi.org/10.1557/s43578-020-00013-4

IF: 2.7

2021-01-08

Journal of Materials Research

Abstract:An area-selective atomic layer deposition (AS-ALD) process is developed that achieves increased selectivity by combining two strategies: i) selective enhancement using a small molecule activator and ii) self-assembled monolayer (SAM)-based inhibition. Specifically, we show that Pt can be selectively deposited on SiO2 over Co. In this process, Co, which serves as the non-growth surface, is protected by an octadecylphosphonic acid (ODPA) SAM, while the subsequent nucleation and growth of Pt on SiO2 is enhanced using a trimethylaluminum (AlMe3) pretreatment. This combination of enhancement and inhibition yields 3–6 times higher Pt coverage on the growth surface (SiO2) while maintaining selectivity of at least 0.98 after 100 Pt ALD cycles. Pt is used here as a model system, but this process can be extended for AS-ALD of other materials.Graphic abstract

materials science, multidisciplinary
(Invited) Selective Atomic Layer Deposition Strategies for Catalytic Applications

Rong Chen,Kun Cao,Xiao Liu,Jiaming Cai,Bin Shan,Yanwei Wen

DOI: https://doi.org/10.1149/ma2019-02/24/1142

2019-01-01

ECS Meeting Abstracts

Abstract:Atomic layer deposition (ALD) is a mainstay of the semiconductor industry since it allows depositing nanometer thin layers of a desired material onto a substrate in a very controlled and uniform manner. Recently, ALD has been adapted to design and synthesize composite catalysts that allow them to enhance multiple chemical reactions. In fabrication of composite catalysts, the selective approaches of ALD are of great importance to exert spatial control of deposition to fabricate three dimensional nanostructures. In this talk, strategies for selective ALD and enabled nanostructures for catalytic applications will be discussed. The atomically ccomposite nanostructures allows motivations of selective-ALD enable directionally and precisely tailoring of the structural parameters, interfaces, and active sites, that is of great significance for advanced catalysis. Both metal and oxide selectively decorated nanoparticle catalysts will be discussed. With these methods, core shell structures, oxide overcoating structures, facet selective structures are fabricated. The DFT calculations for precursors’ chemisorption and binding energies are carried out to verify the results. These strategies of selective ALD have demonstrated unique advantages to design and fabricate highly active and thermal stable catalysts in atomic scale, and also provided insights to understand the structure–activity relationship.
Atomic Layer Deposition-Sequential Self-Limiting Surface Reactions for Advanced Catalyst "Bottom-Up" Synthesis

Junling Lu,Jeffrey W. Elam,Peter C. Stair

DOI: https://doi.org/10.1016/j.surfrep.2016.03.003

IF: 13.417

2016-01-01

Surface Science Reports

Abstract:Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic level is of essential importance for the scientific understanding of reaction mechanisms and for rational design of advanced catalysts with high performance. Such precise control is achievable using atomic layer deposition (ALD). ALD is similar to chemical vapor deposition (CVD), except that the deposition is split into a sequence of two self-limiting surface reactions between gaseous precursor molecules and a substrate. The unique self-limiting feature of ALD allows conformal deposition of catalytic materials on a high surface area catalyst support at the atomic level. The deposited catalytic materials can be precisely constructed on the support by varying the number and type of ALD cycles. As an alternative to the wet chemistry based conventional methods, ALD provides a cycle-by-cycle "bottom-up" approach for nanostructuring supported catalysts with near atomic precision.In this review, we summarize recent attempts to synthesize supported catalysts with ALD. Nucleation and growth of metals by ALD on oxides and carbon materials for precise synthesis of supported monometallic catalyst are reviewed. The capability of achieving precise control over the particle size of monometallic nanoparticles by ALD is emphasized. The resulting metal catalysts with high dispersions and uniformity often show comparable or remarkably higher activity than those prepared by conventional methods. For supported bimetallic catalyst synthesis, we summarize the strategies for controlling the deposition of the secondary metal selectively on the primary metal nanoparticle but not on the support to exclude monometallic formation. As a review of the surface chemistry and growth behavior of metal ALD on metal surfaces, we demonstrate the ways to precisely tune size, composition and structure of bimetallic metal nanoparticles. The cycle-by-cycle "bottom up" construction of bimetallic (or multiple components) nanoparticles with near atomic precision on supports by ALD is illustrated. Applying metal oxide ALD over metal nanoparticles can be used to precisely synthesize nanostructured metal catalysts. In this part, the surface chemistry of Al2O3 ALD on metals is specifically reviewed. Next, we discuss the methods of tailoring the catalytic performance of metal catalysts including activity, selectivity and stability, through selective blocking of the low-coordination sites of metal nanoparticles, the confinement effect, and the formation of new metal-oxide interfaces. Synthesis of supported metal oxide catalysts with high dispersions and "bottom up" nanostructured photocatalytic architectures are also included. Therein, the surface chemistry and morphology of oxide ALD on oxides and carbon materials as well as their catalytic performance are summarized. (C) 2016 Elsevier B.V. All rights reserved.
Unravelling the Selective Growth Mechanism of AlOx with Dimethylaluminum Isopropoxide As a Precursor in Atomic Layer Deposition: a Combined Theoretical and Experimental Study

Jiaqiang Yang,Kun Cao,Quan Hu,Yanwei Wen,Xiao Liu,Rong Chen,Bin Shan

DOI: https://doi.org/10.1039/c9ta11575g

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:The selective encapsulation of noble metal catalysts is a newly developed method to maintain their durability and reactivity. In our work, we have found that AlOx can preferentially encapsulate Pt nanoparticle facets with dimethylaluminum isopropoxide (DMAI) as an ALD precursor. The selectivity originates from the preferential DMAI decomposition mechanism on double hydroxyl sites of the Pt (111) facet, with the subsequent H2O half cycle rapidly removing residual surface intermediates and regenerating the hydroxyls as reaction sites for subsequent cycles. Related microkinetic and experimental results confirm that by the substitution of one methyl in trimethylaluminum (TMA) with an isopropanol radical, DMAI as the precursor can preferentially coat the Pt (111) facets and leave other sites intact through controlling the ALD deposition parameters. The substituent effect in DMAI is also discussed in detail to give guidance to ALD precursor design. Combining theoretical and experimental studies, our work provides for the first time a feasible strategy to achieve selective decoration of AlOx on Pt nanoparticles via ALD.
(Invited) Atomic Layer Deposition for Catalyst “Bottom-Up” Synthesis

Junling Lu

DOI: https://doi.org/10.1149/ma2016-02/28/1867

2016-01-01

Abstract:Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic level is of essential importance for the scientific understanding of reaction mechanisms and for rational design of advanced catalysts with high performance. Such precise control is achievable using atomic layer deposition (ALD). ALD is similar to chemical vapor deposition (CVD), except that the deposition is split into a sequence of two self-limiting surface reactions between gaseous precursor molecules and a substrate. The unique self-limiting feature of ALD allows conformal deposition of catalytic materials on a high surface area catalyst support at the atomic level. The deposited catalytic materials can be precisely constructed on the support by varying the number and type of ALD cycles. As an alternative to the wet-chemistry based conventional methods, ALD provides a cycle-by-cycle “bottom-up” approach for nanostructuring supported catalysts with near atomic precision [1, 2]. In this presentation, the capability of achieving precise control over the particle size of monometallic nanoparticles by ALD is emphasized. The possibility of the preparation of single-atom metal catalysts by ALD at elevated temperatures will be discussed [3]. For supported bimetallic catalyst synthesis, I will show the challenges of combing two metal ALD processes to form bimetallic nanoparticles synthesis. Then our recent the strategy developed for selective metal-on-metal ALD for precise synthesis of supported bimetallic catalysts while excluding monometallic formation are particularly highlighted [4, 5]. In the final part of my presentation, I will focus on oxide ALD on metals for precise synthesis of nanostructured metal catalysts, therein, I will discuss the methods of tailoring the catalytic performance of metal catalysts including activity, selectivity and stability, through selective blocking of the low-coordination sites of metal nanoparticles, the confinement effect, and the formation of new metal-oxide interfaces [6, 7]. References (1) J.L. Lu, J.W. Elam, P.C. Stair, Acc. Chem. Res. 46 (2013) 1806-1815. (2) J.L. Lu, J.W. Elam, P.C. Stair, Surf. Sci. Rep. 2016, doi:10.1016/j.surfrep.2016.1003.1003. (3) H. Yan, H. Cheng, H. Yi, Y. Lin, T. Yao, C.L. Wang, J.J. Li, S.Q. Wei, J.L. Lu, J. Am. Chem. Soc. 2015, 137, 10484-10487 (4) J.L. Lu, K.B. Low, Y. Lei, J.A. Libera, A. Nicholls, P.C. Stair, J.W. Elam, Nat. Commun. 2014, 5 3264. (5) H.W. Wang, C.L. Wang, H. Yan, H. Yi, J.L. Lu, J. Catal. 2015, 324, 59-68. (6) J.L. Lu, B. Fu, M.C. Kung, G. Xiao, J.W. Elam, H.H. Kung, P.C. Stair, Science 2012, 335, 1205. (7) H. Yi, H.Y. Du, Y.L. Hu, H. Yan, H.-L. Jiang, J.L. Lu, ACS Catal. 2015, 5, 2735-2739.
Atomic Layer Deposition: A Gas Phase Route to Bottom-up Precise Synthesis of Heterogeneous Catalyst

Wang Hengwei,Lu Junling

DOI: https://doi.org/10.3866/pku.whxb201804201

2018-01-01

Acta Physico-Chimica Sinica

Abstract:Heterogeneous catalysts are usually synthesized by the conventional wet-chemistry methods, including wet-impregnation, ion exchange, and deposition-precipitation. With the development of catalyst synthesis, great progress has been made in many industrially important catalytic processes. However, these catalytic materials often have very complex structures along with poor uniformity of active sites. Such heterogeneity of active site structures significantly decreases catalytic performance, especially in terms of selectivity, and hinders atomic-level understanding of structure-activity relationships. Moreover, loss of exposed active components by sintering or leaching under harsh reaction conditions causes considerable catalyst deactivation. It is desirable to develop a facile method to tune catalyst active site structures, as well as their local chemical environments on the atomic level, thereby facilitating reaction mechanisms understanding and rational design of catalysts with high stability. Atomic layer deposition (ALD), a gas-phase technique for thin film growth, has emerged as an alternative method to synthesize heterogeneous catalysts. Like chemical vapor deposition (CVD), ALD relies on a sequence of molecular-level, self-limiting surface reactions between the vapors of precursor molecules and a substrate. This unique character makes it possible to deposit various catalytic materials uniformly on a high-surface-area support with nearly atomic precision. By tuning the number, sequence, and types of ALD cycles, bottom-up precise construction of catalytic architectures on a support can be achieved. In this review, we focus on the design and synthesis of supported metal catalysts using ALD. We first review strategies developed to precisely tailor the size, composition, and structures of metal nanoparticles (NPs) using ALD. Catalytic performances of these ALD metal catalysts are also discussed and compared to conventional catalysts. We highlight synthetic strategies for synthesis of metal single-atom catalysts and bottom-up precise synthesis of dimeric metal catalysts. Their impact on catalysis is discussed. We demonstrate that metal oxide ALD on metal NPs can enhance catalytic activity, selectivity, and especially stability. In particular, we show that site-selective blocking of metal NPs with an oxide overcoat improves selectivity and contributes to an understanding of the distinct functionalities of the low-and high-coordination sites in catalytic reactions on the atomic level. Next, we discuss an effective method to construct bifunctional catalysts via precisely-controlled addition of a secondary functionality using ALD. Finally, we summarize the advantages of ALD for the advanced design and synthesis of catalysts and discuss the challenges and opportunities of scaling up ALD catalyst synthesis for practical applications.
Synthesis And Stabilization Of Supported Metal Catalysts By Atomic Layer Deposition

Junling Lu,Jeffrey W. Elam,Peter C. Stair

DOI: https://doi.org/10.1021/ar300229c

IF: 24.466

2013-01-01

Accounts of Chemical Research

Abstract:Supported metal nanoparticles are among the most important catalysts for many practical reactions, including petroleum refining, automobile exhaust treatment, and Fischer-Tropsch synthesis. The catalytic performance strongly depends on the size, composition, and structure of the metal nanoparticles, as well as the underlying support. Scientists have used conventional synthesis methods including impregnation, ion exchange, and deposition precipitation to control and tune these factors, to establish structure performance relationships, and to develop better catalysts. Meanwhile, chemists have Improved the stability of metal nanoparticles against sintering by the application of protective layers, such as polymers and oxides that encapsulate the metal particle. This often leads to decreased catalytic activity due to a lack of precise control over the thickness of the protective layer.A promising method of catalyst synthesis is atomic layer deposition (ALD). ALD is a variation on chemical vapor deposition in which metals, oxides, and other materials are deposited on surfaces by a sequence of self-limiting reactions. The self-limiting character of these reactions makes it possible to achieve uniform deposits on high-surface-area porous solids. Therefore, design and synthesis of advanced catalysts on the nanoscale becomes possible through precise control over the structure and composition of the underlying support, the catalytic active sites, and the protective layer. In this Account, we describe our advances in the synthesis and stabilization of supported metal catalysts by ALD. After a short introduction to the technique of ALD, we show several strategies for metal catalyst synthesis by ALD that take advantage of its self-limiting feature. Monometallic and bimetallic catalysts with precise control over the metal particle size, composition, and structure were achieved by combining ALD sequences, surface treatments, and deposition temperature control.Next, we describe ALD oxide overcoats applied with atomically precise thickness control that stabilize metal catalysts while preserving their catalytic function. We also discuss strategies for generation and control over the porosity of the overcoats that allow the embedded metal particles to remain accessible by reactants, and the details for ALD alumina overcoats on metal catalysts. Moreover, using methanol decomposition and oxidative dehydrogenation of ethane as probe reactions, we demonstrate that selectively blocking low coordination metal sites by oxide overcoats can provide another strategy to enhance both the durability and selectivity of metal catalysts.
Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Yi-Cheng Li,Kun Cao,Yu-Xiao Lan,Jing-Ming Zhang,Miao Gong,Yan-Wei Wen,Bin Shan,Rong Chen

DOI: https://doi.org/10.3390/molecules26103056

IF: 4.6

2021-05-20

Molecules

Abstract:Manganese oxide (MnOx) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnOx films can be used in some key steps of nanomanufacturing. In this work, MnOx films are deposited on Pt, Cu and SiO2 substrates using Mn(EtCp)2 and H2O over a temperature range of 80–215 °C. Inherently area-selective atomic layer deposition (ALD) of MnOx is successfully achieved on metal/SiO2 patterns. The selectivity improves with increasing deposition temperature within the ALD window. Moreover, it is demonstrated that with the decrease of electronegativity differences between M (M = Si, Cu and Pt) and O, the chemisorption energy barrier decreases, which affects the initial nucleation rate. The inherent ASD aroused by the electronegativity differences shows a possible method for further development and prediction of ASD processes.

chemistry, multidisciplinary,biochemistry & molecular biology
First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Junling Lu,Bin Liu,Nathan P. Guisinger,Peter C. Stair,Jeffrey P. Greeley,Jeffrey W. Elam

DOI: https://doi.org/10.1021/cm503178j

IF: 10.508

2014-01-01

Chemistry of Materials

Abstract:The atomic layer deposition (ALD) of metal oxides on metal surfaces is of great importance in applications such as microelectronics, corrosion resistance, and catalysis. In this work, Al2O3 ALD using trimethylaluminum (TMA) and water was investigated on Pd, Pt, Ir, and Cu surfaces by combining in situ quartz crystal microbalance (QCM), quadrupole mass spectroscopy (QMS), and scanning tunneling microscopy (STM) measurements with density functional theory (DFT) calculations. These studies revealed that TMA undergoes dissociative chemisorption to form monomethyl aluminum (AlCH3*, the asterisk designates a surface species) on both Pd and Pt, which transform into Al(OH)(3)* during the subsequent water exposure. Furthermore, the AlCH3* can further dissociate into Al* and CH3* on stepped Pt(211). Additional DFT calculations predicted that Al2O3 ALD should proceed on Ir following a similar mechanism but not on Cu due to the endothermicity for TMA dissociation. These predictions were confirmed by in situ QCM, QMS, and STM measurements. Our combined theoretical and experimental study also found that the preferential decoration of low-coordination metal sites, especially after high temperature treatment, correlates with the differences in free energy between Al2O3 ALD on the (111) and stepped (211) surfaces. These insights into Al2O3 growth on metal surfaces can guide the future design of advanced metal/metal oxide catalysts with greater durability by protecting the metal against sintering and dissolution and enhanced selectivity by blocking low-coordination metal sites while leaving (111) facets available for catalysis.
Vapor-Phase Atomic Layer Deposition of Nickel Sulfide and Its Application for Efficient Oxygen-Evolution Electrocatalysis

Hao Li,Youdong Shao,Yantao Su,Yuanhong Gao,Xinwei Wang

DOI: https://doi.org/10.1021/acs.chemmater.5b04645

IF: 10.508

2016-01-01

Chemistry of Materials

Abstract:Vapor-phase atomic layer deposition (ALD) of nickel sulfide (NiSx) is comprehensively reported for the first time. The deposition process employs bis(N,N'-di-tert-butylacetamidinato)nickel(II) and H2S as the reactants and is able to produce fairly smooth, pure, godlevskite-structured NiSx thin films following an ideal layer-by-layer ALD growth fashion for a relatively wide process temperature range from 90-200 degrees C. Excellent conformal coating is demonstrated for this ALD process, as the deposited NiSx films are able to uniformly and conformally cover deep narrow trenches with aspect ratio as high as 10:1, which highlights the general and broad applicability of this ALD process for fabricating complex 3D-structured nanodevices. Further, we demonstrate the applications of this ALD NiSx for oxygen-evolution reaction (OER) electrocatalysis. The ALD NiSx is found to convert to nickel (oxy)hydrate after electrochemical aging, and the aged product shows a remarkable electrocatalytic activity and long-term stability, which is among the best electrocatalytic performance reported for nonprecious OER catalysts. Considering that ALD can be easily scaled up and integrated with 3D nanostructures, we believe that this ALD NiSx process will be highly promising for a variety of applications in future energy devices.
Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition

Xirong Jiang,Stacey F. Bent

DOI: https://doi.org/10.1021/jp905317n

2009-09-03

The Journal of Physical Chemistry C

Abstract:Area-selective atomic layer deposition (ALD) is a technique that can be used for fabricating 3D structures with dimensions down to the nanoscale. A patterned resist, typically a self-assembled monolayer (SAM), directs film deposition through area-selective ALD, leading to lateral patterning. This article will describe the overall approach to area-selective ALD, introduce the process of atomic layer deposition, and discuss the development of monolayer ALD resists. We will describe the results of studies which show that monolayers with a high degree of packing and hydrophobicity perform best in blocking ALD, and that resistance against ALD can be used as a sensitive probe of SAM quality. We further describe patterning of the SAM through soft lithography, in particular microcontact printing (μCP), for the area-selective ALD process, and compare the area-selective ALD processes for HfO2 and Pt ALD. The powerful patterning capability of μCP and the flexibility of area-selective ALD for various materials can impact many potential applications, and studies applying this process to fuel cell devices and integrated circuits will be described.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Mikko Ritala,Kaupo Kukli,Antti Rahtu,Petri I. Räisänen,Markku Leskelä,Timo Sajavaara,Juhani Keinonen

DOI: https://doi.org/10.1126/science.288.5464.319

IF: 56.9

2000-04-14

Science

Abstract:A chemical approach to atomic layer deposition (ALD) of oxide thin films is reported here. Instead of using water or other compounds for an oxygen source, oxygen is obtained from a metal alkoxide, which serves as both an oxygen and a metal source when it reacts with another metal compound such as a metal chloride or a metal alkyl. These reactions generally enable deposition of oxides of many metals. With this approach, an alumina film has been deposited on silicon without creating an interfacial silicon oxide layer that otherwise forms easily. This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.

multidisciplinary sciences
Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Wonyoung Lee,Fritz B. Prinz

DOI: https://doi.org/10.1149/1.3158593

IF: 3.9

2009-01-01

Journal of The Electrochemical Society

Abstract:We investigated area-selective atomic layer deposition (ALD) of zirconia (ZrO2) using a self-assembled monolayer (SAM) and atomic force microscopy (AFM) oxidation lithography as a method of fabricating nanostructures. A SAM layer was used as a chemical mask for the ZrO2 ALD process, and AFM oxidation lithography was used as a nanoscale patterning tool. AFM oxidation lithography was applied to create oxide patterns on octadecyltrichlorosilane SAM-grown silicon substrates. Subsequent HF etching removed the oxide patterns locally, exposing a silicon substrate underneath. After 100 cycles of the ALD process, ZrO2 ALD nanostructures ∼7nm high and sub-100 nm wide were fabricated with no detectable Zr element outside the pattern defined by AFM oxidation lithography. The present method makes it possible to construct advanced metal-oxide-semiconductor field effect transistor and quantum confinement structures with a wide range of ALD precursor materials.

electrochemistry,materials science, coatings & films
Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Kun Cao,Zilian Qi,Eryan Gu,Yanwei Wen,Rong Chen

DOI: https://doi.org/10.1149/ma2023-02291459mtgabs

2023-01-01

ECS Meeting Abstracts

Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.
(Invited) Atomistic Insights into Continuous and Area-Selective ALD Processes: First-Principles Simulations of the Underpinning Surface Chemistry

Bora Karasulu

DOI: https://doi.org/10.1149/ma2023-02291458mtgabs

2023-12-22

ECS Meeting Abstracts

Abstract:Atomic layer deposition (ALD) is a highly advanced thin film deposition technology that has found widespread use in nanoelectronics, photovoltaics, fuel cell and recently all-solid-state battery applications. It is widely regarded as the state-of-the-art technique for producing thin films due to its exceptional conformality on high-aspect ratio structures, atomic level thickness control, and tuneable film composition. In recent years, area-selective atomic layer deposition (AS-ALD) has emerged as a promising technology for high-fidelity nano-patterning, and significant progress has been made in understanding and developing highly selective processes for various material systems. Along these lines, we have recently shown that high-throughput, low defectivity, highly selective SiO 2 deposition can be achieved on various substrates by combining atmospheric-pressure spatial ALD with integrated area-deactivation using small molecule inhibitors and plasma-enhanced spatial etching [1]. ALD is a surface-controlled technique that relies on the self-limiting reactions of the precursors and co-reactants with the deposition surface in alternating cycles. The initial step in ALD nucleation on the target substrate is a key factor in the deposited film quality, and efficient precursor binding on the surface is critical. Molecular dynamics (MD) simulations and minimum-energy reaction pathway analysis based on ab initio Density Functional Theory (DFT) calculations provide invaluable insights into the surface chemistry, enabling customisation of ALD processes to boost uniformity, conformality, and area-selectivity of the resulting films. In this talk, I will discuss how first-principles simulations can be used synergistically with experimental findings to achieve high-efficiency plasma-enhanced atomic-layer cleaning (ALC) of impurities from various ALD films and substrates, design proper chemical surface modifications that enable continuous and conformal ALD nucleation even on chemically-inert surfaces (like graphene), and unveil the particular surface chemistry governing high-fidelity area-selectivity with an atomic-level precision in ultrathin coatings [1-9]. By combining the insights gained from first-principles simulations with experimental techniques, we can push the frontiers of device manufacturing to new heights, opening up exciting possibilities for further technological advances in nanoelectronics, photovoltaics, fuel cell and energy storage applications. [1] Advanced Materials , Just Accepted, (DOI: 10.1002/adma.202301204); [2] Nanoscale , 2021, 13, 10092-10099; [3] Chem. Mater. 2019 , 31 (4), 1250-1257.; [4] Adv. Mater. Interfaces 2018 , 5 (13), 1800268.; [5] Chem. Mater. 2017 , 29 (3), 921–925.; [6] ACS Nano 2017 , 11 (9), 9303–9311.; [7] Sol. Energy Mater. Sol. Cells 2017 , 163 , 43–50.; [8] Chem. Mater. 2017 , 29 (5), 2090–2100.; [9] Nanoscale 2016 , 8 (47), 19829–19845. Figure 1
Chemical and Structural Configuration of Pt-Doped Metal Oxide Thin Films Prepared by Atomic Layer Deposition

Ranjith K. Ramachandran,Matthias Filez,Eduardo Solano,Hilde Poelman,Matthias M. Minjauw,Michiel Van Daele,Ji-Yu Feng,Andrea La Porta,Thomas Altantzis,Emiliano Fonda,Alessandro Coati,Yves Garreau,Sara Bals,Guy B. Marin,Christophe Detavernier,Jolien Dendooven

DOI: https://doi.org/10.1021/acs.chemmater.9b03066

IF: 10.508

2019-11-11

Chemistry of Materials

Abstract:Pt-doped semiconducting metal oxides and Pt metal clusters embedded in an oxide matrix are of interest for applications such as catalysis and gas sensing, energy storage, and memory devices. Accurate tuning of the dopant level is crucial for adjusting the properties of these materials. Here, a novel atomic layer deposition (ALD)-based method for doping Pt into In2O3 specifically, and metals in metal oxides in general, is demonstrated. This approach combines alternating exposures of Pt and In2O3 ALD processes in a single "supercycle" followed by supercycle repetition leading to multilayered nanocomposites. The atomic-level control of ALD and its conformal nature make the method suitable for accurate dopant control even on high-surface-area supports. The oxidation state, local structural environment, and crystalline phase of the embedded Pt dopants were obtained by means of X-ray characterization methods and high-angle annular dark-field scanning transmission electron microscopy. In addition, this approach allows characterization of the nucleation stages of metal ALD processes by stacking those states multiple times in an oxide matrix. Regardless of experimental conditions, a few Pt ALD cycles lead to the formation of oxidized Pt species due to their highly dispersed nature, as proven by X-ray absorption spectroscopy. Grazing-incidence small-angle X-ray scattering and high-resolution scanning transmission electron microscopy, combined with energy-dispersive X-ray spectroscopy, show that Pt is evenly distributed in the In2O3 matrix without the formation of clusters. For a larger number of Pt ALD cycles, typically >10, the oxidation state gradually evolves toward fully metallic, and metallic Pt clusters are obtained within the In2O3 matrix. This work reveals how tuning of the ALD supercycle approach for Pt doping allows controlled engineering of the Pt compositional and structural configurations within a metal oxide matrix.

materials science, multidisciplinary,chemistry, physical
Well-Defined Nanostructures For Catalysis By Atomic Layer Deposition

Yomaira J. Pagan-Torres,Junling Lu,Eranda Nikolla,Ana C. Alba-Rubio

DOI: https://doi.org/10.1016/B978-0-12-805090-3.00017-6

2017-01-01

Abstract:Abstract Atomic layer deposition (ALD) has evolved as an important tool for the design and synthesis of well-defined nanostructures for catalysis. Its self-limiting nature makes possible the preparation of catalytic materials with well-defined subnanometer and nanometer features on high-surface-area supports with near-atomic precision. This allows for the establishment of the correlation between the active site structures and catalytic performance, thus providing insights for understanding the reaction mechanism and the rational design of improved catalysts. Important examples include ALD of metal oxides for the synthesis of catalytic sites and deposition of protecting layers on other materials, modification of high-surface-area supports, and synthesis of supported monometallic and bimetallic catalysts with controlled size, composition, and morphology, among others. This chapter provides the reader with detailed information on tailoring nanostructures for catalytic applications using ALD and a discussion about the challenges and opportunities for the field.
Chemistry for Positive Pattern Transfer Using Area-Selective Atomic Layer Deposition

R. Chen,S. F. Bent

DOI: https://doi.org/10.1002/adma.200502470

IF: 29.4

2006-01-01

Advanced Materials

Abstract:A chemically selective process to achieve high-resolution area-selective atomic layer deposition (ALD) of Pt thin films on dielectrics (see figure) is introduced. By utilizing the intrinsically selective adsorption behavior of 1-octadecene, a monolayer resist is attached only to the hydride-terminated silicon regions of a patterned SiO(2)/Si substrate. Subsequently, a Pt thin film is selectively deposited only onto the oxide regions by ALD.

Origins of sulphate in Antarctic dry-valley soils as deduced from anomalous 17O compositions

(Invited) Area-Selective Atomic Layer Deposition of Manganese Oxides on Metal−Dielectric Patterns

Modification of High-Surface-Area Carbons Using Self-Limited Atomic Layer Deposition

Increased selectivity in area-selective ALD by combining nucleation enhancement and SAM-based inhibition

(Invited) Selective Atomic Layer Deposition Strategies for Catalytic Applications

Atomic Layer Deposition-Sequential Self-Limiting Surface Reactions for Advanced Catalyst "Bottom-Up" Synthesis

Unravelling the Selective Growth Mechanism of AlOx with Dimethylaluminum Isopropoxide As a Precursor in Atomic Layer Deposition: a Combined Theoretical and Experimental Study

(Invited) Atomic Layer Deposition for Catalyst “Bottom-Up” Synthesis

Atomic Layer Deposition: A Gas Phase Route to Bottom-up Precise Synthesis of Heterogeneous Catalyst

Synthesis And Stabilization Of Supported Metal Catalysts By Atomic Layer Deposition

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Vapor-Phase Atomic Layer Deposition of Nickel Sulfide and Its Application for Efficient Oxygen-Evolution Electrocatalysis

Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

(Invited) Atomistic Insights into Continuous and Area-Selective ALD Processes: First-Principles Simulations of the Underpinning Surface Chemistry

Chemical and Structural Configuration of Pt-Doped Metal Oxide Thin Films Prepared by Atomic Layer Deposition

Well-Defined Nanostructures For Catalysis By Atomic Layer Deposition

Chemistry for Positive Pattern Transfer Using Area-Selective Atomic Layer Deposition