Abstract:A two‐step strategy for achieving selective deposition of dielectric on metal (DoM) is demonstrated by using two different self‐assembled monolayers with orthogonal surface chemistry. By first depositing an alkanethiol protector on Cu, the undesired absorption of organosilane inhibitor onto Cu is prevented, leading to selective formation of organosilane inhibitor on SiO2 and successful DoM after removing alkanethiol by thermal treatment. Although there have been several demonstrations of area‐selective atomic layer deposition (AS‐ALD) of dielectric on dielectric in metal/dielectric patterns, the reverse process of selective dielectric on metal (DoM) is not as well developed due to the challenge of inhibiting only the dielectrics. Unavoidable native oxide formation on metals tends to lead to similar surface chemical properties between metal and dielectric substrates, decreasing the selectivity in inhibitor adsorption. Hence, to achieve DoM, preventing unwanted inhibitor adsorption on metals is critical. This study demonstrates a two‐step strategy of first applying a dodecanethiol (DDT) self‐assembled monolayer (SAM) on a Cu/SiO2 pattern to protect the Cu surfaces from subsequent deposition of an octadecyltrimethoxysilane (OTMS) inhibitor, which then selectively forms an OTMS SAM on SiO2. It is further shown that by removing the DDT protector with thermal treatment before AS‐ALD, subsequent ALD growth on Cu is not affected while ALD remains blocked on the OTMS‐covered SiO2 regions. Using this strategy, DoM is demonstrated with selectivity above 0.9 after 5.6 nm of ZnO and 1.5 nm of Al2O3 ALD. This work presents a new approach to expand the material systems available to AS‐ALD which may help enable more applications in microelectronics, optoelectronics, and energy.

Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition

Inherent Area-Selective Atomic Layer Deposition of ZnS

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Atomic layer deposition of ZnO on thermal SiO 2 and Si surfaces using N 2-diluted diethylzinc and H 2O 2 precursors

Spatial atmospheric atomic layer deposition of Al(x)Zn(1-x)O

Preferential growth of ZnO thin films by the atomic layer deposition technique

Standing and sitting adlayers in atomic layer deposition of ZnO

Achieving Area-Selective Atomic Layer Deposition on Patterned Substrates by Selective Surface Modification

Atomic layer deposition of Al-doped ZnO films using aluminum isopropoxide as the Al precursor

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

(Invited) Area-Selective Atomic Layer Deposition of Manganese Oxides on Metal−Dielectric Patterns

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

Area Selective Atomic Layer Deposition by Soft Lithography

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Numerical simulation of atomic layer deposition for thin deposit formation in a mesoporous substrate

Increased selectivity in area-selective ALD by combining nucleation enhancement and SAM-based inhibition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption