Atomic layer deposition of Al-doped ZnO films using aluminum isopropoxide as the Al precursor

Xu Qian,Yanqiang Cao,Binglei Guo,Haifa Zhai,Aidong Li
DOI: https://doi.org/10.1002/cvde.201207051
2013-01-01
Chemical Vapor Deposition
Abstract:Al-doped ZnO (AZO) films are deposited at 200 degrees C by atomic layer deposition (ALD) on borosilicate glass and Si(001) substrates using diethylzinc (DEZ) and aluminum isopropoxide (AIP) as the Zn and Al precursors, respectively. The effect of the Zn/Al ALD cycle ratio and the AIP source temperature on the Al dopant concentration and resistivity of AZO films is carefully investigated. By changing the AIP temperature from 115 degrees C to 135 degrees C, at the optimal Zn/Al cycle ratio of 19:1, the Al dopant concentration ([Al]/([Al]+[Zn])) in AZO films varies from 0.15 at.-% to 2.32 at.-%. The 60nm thick AZO films deposited at an AIP temperature of 120 degrees C show the lowest resistivity of 9.4x10-4 cm, with better optical transparency.
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