Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.

Inherent Area-Selective Atomic Layer Deposition of ZnS

Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition

Atomic layer deposition of two-dimensional layered zirconium sulfide

Increased selectivity in area-selective ALD by combining nucleation enhancement and SAM-based inhibition

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO 2 and TiON on SiN vs SiO 2

Spatial Atomic Layer Deposition of Zno/Tio2 Nanolaminates

Initial Growth and Agglomeration During Atomic Layer Deposition of Nickel Sulfide

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Atomic layer deposition of ZnS nanotubes

Organosulfide Inhibitor Instigated Passivation of Multiple Substrates for Area-Selective Atomic Layer Deposition of HfO 2

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Atomic layer deposition of ZnO on thermal SiO 2 and Si surfaces using N 2-diluted diethylzinc and H 2O 2 precursors

Inherently Selective Atomic Layer Deposition and Applications

(Invited) Area-Selective Atomic Layer Deposition of Manganese Oxides on Metal−Dielectric Patterns

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

Molecular Mechanism of Selective Al2O3 Atomic Layer Deposition on Self-Assembled Monolayers

Surface Acidity-Induced Inherently Selective Atomic Layer Deposition of Tantalum Oxide on Dielectrics

Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN