Abstract:Zinc tin oxide (ZTO) thin films can be deposited by atomic layer deposition (ALD) with adjustable electrical, optical and structural properties. However, the ternary ALD processes usually suffer from low growth rate and difficulty in controlling film thickness and elemental composition, due to the interaction of ZnO and SnO2 processes. In this work, ZTO thin films with different Sn levels are prepared by ALD super cycles using diethylzinc, tetrakis(dimethylamido)tin, and water. It is observed that both the film growth rate and atom composition show nonlinear variation versus [Sn]/([Sn]+[Zn]) cycle ratio. The experimental thickness measured by spectroscopic ellipsometry and X-ray reflectivity are much lower than the expected thickness linearly interpolated from pure ZnO and SnOx films. The [Sn]/([Sn]+[Zn]) atom ratios estimated by X-ray photoelectron spectroscopy have higher values than that expected from the cycle ratios. Hence, to characterize the film growth behavior versus cycle ratio, a numerical method is proposed by simulating the effect of reduced density and reactivity of surface hydroxyls and surface etching reactions. The structure, electrical and optical properties of ZTO with different Sn levels are also examined by X-ray diffraction, atomic force microscope, Hall measurements and ultraviolet–visible–infrared transmittance spectroscopy. The ZTO turns out to be transparent nanocrystalline or amorphous films with smooth surface. With more Sn contents, the film resistivity gets higher (>1 Ω cm) and the optical bandgap rises from 3.47 to 3.83 eV.

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

ALD grown zinc oxide with controllable electrical properties

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Electron doping of ALD-grown ZnO thin films through Al and P substitutions

N and Al co-doping as a way to p-type ZnO without post-growth annealing

Optical and Electrical Properties of Al-doped ZnO Thin Films by Atomic Layer Deposition

Characteristics of Atomic Layer Deposited Transparent Aluminum-Doped Zinc Oxide Thin Films at Low Temperature

Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition

Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

Structural, Optical, Electrical and Resistive Switching Properties of Zno Thin Films Deposited by Thermal and Plasma-Enhanced Atomic Layer Deposition

Preferential growth of ZnO thin films by the atomic layer deposition technique

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Spatial atmospheric atomic layer deposition of Al(x)Zn(1-x)O

Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition

Characteristic research of zinc oxide based thin film transistor by ALD technology

Tuning the Optical and Electrical Properties of ALD-Grown ZnO Films by Germanium Doping

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

A Comparative Study of Growth and Properties of Atomic Layer Deposited Transparent Conductive Oxide of Al Doped ZnO Films from Different Al Precursors

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition