Abstract:Zinc oxide grown by Atomic Layer Deposition (ALD) is an extraordinary interesting material for electronic applications requiring low processing temperature. In this paper, we show that electrical conductivity of ZnO‐ALD films can be significantly varied from 10‐1 to 102 Ω‐1·cm‐1 by moving the growth conditions from oxygen‐rich to zinc‐rich, which can be realized through changing the deposition temperature between 100 and 200 °C. The temperature dependent photoluminescence studies give an evidence that shallow defects states in ZnO‐ALD films are clearly influenced by oxygen‐ and zinc‐rich conditions, which affect binding energy of existing donors as well as the relative intensity of donor‐ to acceptor‐related luminescence. The films grown at 100 °C, under O‐rich conditions, are more resistive and show considerably more intensive acceptor‐related PL band than those grown at 200°c, when Zn‐rich conditions are achieved. Moreover, scaling of electron concentration with the growth temperature is accompanied by a variance of the bandgap due to the Burstein‐Moss effect. We also show that acceptor related conductivity of ZnO‐ALD can be achieved by nitrogen doping under O‐rich conditions. The related homojunction with the rectification ratio of 4 × 104 (at ± 2V) has been obtained based on ZnO‐ALD films deposited at 100°C.This article is protected by copyright. All rights reserved.

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