Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO2 Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

(Invited, Digital Presentation) Atomic Layer Deposited Templates for Constructing Functional Metal-Organic Framework Thin Films

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Self-feeding Formation of Atomically Thin Molybdenum Nanoflakes on MoS2 Monolayer

Organosulfide Inhibitor Instigated Passivation of Multiple Substrates for Area-Selective Atomic Layer Deposition of HfO 2

Sequential Use of Orthogonal Self‐Assembled Monolayers for Area‐Selective Atomic Layer Deposition of Dielectric on Metal

Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Selective Atomic Layer Deposition to Extend Moore’s Law and Beyond: Surface Kinetic Tuning for Self-Aligned Growth

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO 2 and TiON on SiN vs SiO 2

Ion beam-induced hydroxylation controls molybdenum disulfide growth

Atomic layer deposition meets metal-organic frameworks

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

“Dual-Tone” Area-Selective Deposition: Selectivity Inversion of Polymer on Patterned Si/SiO 2 Starting Surfaces

Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2