Effects of LiNbO3 Doping on the Microstructures and Electrical Properties of BiScO3–PbTiO3 Piezoelectric System

Querui Hu,Yiping Wang,Lei Wu,Jiang Yin,Lang Chen,Guoliang Yuan,Ying Yang
DOI: https://doi.org/10.1007/s10854-018-9898-y
2018-01-01
Journal of Materials Science Materials in Electronics
Abstract:Piezoelectric ceramics xLiNbO3–yBiScO3–(1−x−y)PbTiO3 (LN–BS–PT, 0.00 ≤ x ≤ 0.10, 0.30 ≤ y ≤ 0.36) were synthesized and their phase diagram and morphotropic phase boundary between rhombohedral and tetragonal phases have been confirmed. The optimal properties were found at the composition of 0.03LN–0.36BS–0.61PT with piezoelectric coefficient d33* value of 702 pm/V, d33 of 551 pC/N, planar electromechanical coupling factor kp of 0.51, remnant polarization Pr of 46.5 µC/cm2, Curie temperature Tc of 337 °C, and a large strain of 0.351% at an electric field of 50 kV/cm and frequency of 2 Hz with a low strain hysteresis of 5.9%. The Curie temperature of the ternary system presents a linear relationship with LiNbO3 and BiScO3 contents. The optimization of these electric properties was probably ascribed to the enhancement in domain walls and the improving mobility of domain switching due to LiNbO3 doping.
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