Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Growth and Interface of Amorphous La2Hf2O7/Si Thin Film

The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Microstructure and interfaces of HfO2 thin films grown on silicon substrates

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Interdiffusion Studies for HfO2/Si by GIXR and XPS

In Situ Photoemission Study on Initial Growth of HfO2 Films on Si(1 0 0)

Study of Interfacial Structure of HfO2thin Film on Si by Grazing Incidence X-Ray Reflectivity

Growth and characterization of Peald deposited La2O3 on SiO2/Si

Characterization of Hfo2/La2o3 Layered Stacking Deposited on Si Substrate

Chemical Structure and Interface Reaction of LaCoO3/Si Thin‐film System

Band Offsets Between Amorphous La2hf2o7 And Silicon

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Competitive Si and La Effect in Hfo2 Phase Stabilization in Multi-Layer (la2o3)(0.08)(hfo2) Films

Density Functional Calculations on Atomic and Electronic Structures of Amorphous Hfo2/Si(001) Interface

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy