Abstract:The thermal stability and the electrical properties of HfO2 and Hf–aluminate films prepared by the pulsed laser deposition technique have been investigated by X-ray diffraction, differential thermal analysis, capacitance–voltage correlation, leakage-current measurements and high-resolution transmission electron microscopy observation, respectively. A crystallization transformation from HfO2 amorphous phase to polycrystalline monoclinic structure occurs at about 500 °C. In contrast, the amorphous structure of Hf–aluminate films remains stable at higher temperatures up to 900 °C. Rapid thermal annealing at 1000 °C for 3 min leads to a phase separation in Hf–aluminate films. Tetragonal HfO2(111) is predominant, and Al2O3 separates from Hf–aluminate and is still in the amorphous state. The dielectric constant of amorphous HfO2 and Hf–aluminate films was determined to be about 26 and 16.6, respectively, by measuring a Pt/dielectric film/Pt capacitor structure. A very small equivalent oxide thickness (EOT) value of 0.74 nm for a 3-nm physical thickness Hf–aluminate film on a n-Si substrate with a leakage current of 0.17 A/cm2 at 1-V gate voltage was obtained. The interface at Hf–aluminate/Si is atomically sharp, while a thick interface layer exists between the HfO2 film and the Si substrate, which makes it difficult to obtain an EOT of less than 1 nm.

Band Offsets Between Amorphous La2hf2o7 And Silicon

Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

Growth and Interface of Amorphous La2Hf2O7/Si Thin Film

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Modulation of the Band Offsets Between La2Hf2O7 and Fully Depleted SiGe on Insulator by NH3 Treatment

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Band Offsets Of Er2o3 Films Epitaxially Grown On Si Substrates

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Band offsets at the crystalline/amorphous silicon interface from first-principles

Density Functional Calculations on Atomic and Electronic Structures of Amorphous Hfo2/Si(001) Interface