Abstract:High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability. Besides, under identical conditions of gate oxide thickness and gate voltage, the high-k dielectric enables a greater charge accumulation in the channel region, resulting in a larger number of free electrons available for conduction. However, the lower energy band gap of high-k materials leads to significant leakage currents at the interface with SiC, which greatly affects device reliability. By inserting a layer of SiO2 between the high-k material and SiC, the interfacial barrier can be effectively widened and hence the leakage current will be reduced. In this study, the optimal thickness of the intercalated SiO2 was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al2O3 layer and thermally nitride SiO2. Current–voltage and high-frequency capacitance–voltage measurements were performed on metal–oxide–semiconductor test structures with 35 nm thick Al2O3 stacked on 1 nm, 2 nm, 3 nm, 6 nm, or 9 nm thick nitride SiO2. Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field. Finally, a saturation thickness of stacked SiO2 that contributed to dielectric breakdown and interfacial band offsets was identified. The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.

High-k materials processing: Atomic layer deposition of Al 2O3

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Properties of high-k gate dielectric LaAlO3 thin films

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

An investigation into ultra-thin pseudobinary oxide (TiO 2 ) x (Al 2 O 3 ) 1-x films as high- k gate dielectrics

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

Saturation Thickness of Stacked SiO2 in Atomic-Layer-deposited Al2O3 Gate on 4H-Sic

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications