Abstract:Amorphous alumina films are isotropic and have no grain boundaries, which make them have smooth surfaces, excellent properties, and wide applications in protective coatings, catalysis, and microelectronics. However, high-quality alumina films were usually prepared by vapor-phase approaches which need expensive equipment and long production time. Additionally, amorphous films are long-range disordered, which makes the study of structure–property relationships challenging. Here, a simple sol–gel method is employed to obtain high-quality amorphous Al2O3 thin films. The microstructure, morphology, and mechanical properties of amorphous Al2O3 thin films were systematically investigated. All the Al2O3 thin films heat-treated at 600–800∘C are in amorphous state with ultrasmooth surface (Ra values about 0.29–0.43 nm) and high mechanical properties (elastic modulus ∼170[Formula: see text]GPa, hardness ∼20[Formula: see text]GPa). The mechanical properties (E and H) of Al2O3 films gradually increase with the increase of heat-treating temperature. Additionally, the Al coordination of the amorphous alumina films are analyzed by solid-state NMR and correlated with the mechanical properties. The results show that in amorphous alumina, the presence of tetrahedral Al ([4]Al) and octahedral Al ([6]Al) is helpful to improve the mechanical properties, while the five-coordinated Al ([5]Al) is not conducive to improve the mechanical properties. The results demonstrate that sol–gel method is an attractive alternative to time-consuming and expensive vapor-phase approaches and are useful for scale-up to applications and research of amorphous alumina films.

Development of High-K Hafnium–aluminum Oxide Dielectric Films Using Sol–gel Process

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Microstructure, Optical Properties, and Optical Resonators of Hf1-Xtixo2 Amorphous Thin Films

Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

The Microstructure, Morphology, and Mechanical Properties of Sol-Gel-derived Amorphous Aluminum Oxide Films

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Effect Of Al Addition On The Microstructure And Electronic Structure Of Hfo2 Film

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Effect of Oxygen Flow on the Optical Properties of Hafnium Oxide Thin Films by Dual-Ion Beam Sputtering Deposition

Fabrication and Electrical Characteristics of Ultrathin (Hfo2)(x)(sio2)(1-X) Films by Surface Sol-Gel Method and Reaction-Anneal Treatment

Impact of the Al/Hf Ratio on the Electrical Properties and Band Alignments of Atomic-Layer-Deposited Hfo2/Al2o3 on S-Passivated Gaas Substrates

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer