Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

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Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Reducing optical loss of dual-ion beam sputtered HfO2 films via optimization of coating and annealing parameters

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

Microstructure, Optical Properties, and Optical Resonators of Hf1-Xtixo2 Amorphous Thin Films

Effects of O2 flux on structure, optical properties and hydrophobicity of highly emissive antireflective HfO2 thin films by magnetron sputtering

Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films

Surface Morphology and Optical Properties of Hafnium Oxide Thin Films Produced by Magnetron Sputtering

Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO2 Thin Films

Nanostructuring Hfo2 Thin Films As Antireflection Coatings

Low energy Xe ion beam engineering in optical, structural and morphological properties of hafnium oxide thin films grown by atomic layer deposition technique

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Effect of Deposition Temperature on the Surface, Structural, and Mechanical Properties of HfO2 Using Chemical Vapor Deposition (CVD)

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Development of High-K Hafnium–aluminum Oxide Dielectric Films Using Sol–gel Process

Ion-assisted deposition of moisture-stable hafnium oxide films for ultraviolet applications

Effect of ionic oxygen concentration on properties of SiO2 and Ta2O5 monolayers deposited by ion beam sputtering

Effect Of Al Addition On The Microstructure And Electronic Structure Of Hfo2 Film

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature