Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Over 6 μ m thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β -Ga2O3 drift layers

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Enhancement-mode Ga2O3 FETs with Unintentionally Doped (001) Β-Ga2o3 Channel Layer Grown by Metal-Organic Chemical Vapor Deposition

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

High conductivity of n -type β -Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD