Abstract:A nitrogen-aluminum-gallium-arsenic plasma is formed by pulsed laser co-ablation of an Al target and a GaAs target in electron cyclotron resonance discharge-generated nitrogen plasma for AlxGa1-xN film deposition. The formed plasma was characterized by time-integrated and time-resolved optical emission spectroscopy measurements and the process of AlxGa1-xN deposition was discussed. The plasma contains excited species originally present in the working N-2 gas and energetic species ablated from the targets, and its emission is abundant in the emission bands of diatomic nitrogen molecules and molecular ions and the emission lines of monoatomic aluminum, gallium, and arsenic atoms and atomic ions. The temporal and spatial features of the plasma emission reveal that the nitrogen species in the electron cyclotron resonance nitrogen plasma experience additional excitations due to the expanding ablation plumes, and the ablated species are excited frequently when traveling with the expanding plumes in the nitrogen plasma, making the formed plasma very reactive, which is very important in the process of AlxGa1-xN film deposition. The deposited film was evaluated for composition analysis by energy-dispersive x-ray spectroscopy and structure characterization by x-ray diffraction. The AlxGa1-xN film is slightly nitrogen rich with an aluminum content x of about 0.6 and featured with hexagonal wurtzite crystal structure with preferred c-axis orientation.

Composition and Bandgap Control of AlxGa1−xN Films Synthesized by Plasma-Assisted Pulsed Laser Deposition

Synthesis of high Al content Al x Ga 1− x N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Morphology-controlled synthesis and structural characterization of ternary AlxGa1−xN nanostructures by chemical vapor deposition

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga 2 O 3 Films through Plasma-Enhanced Technology

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Mechanical Properties of AlxGa1−xN Films with High Al Composition Grown on AlN/sapphire Templates

Nitridation Effect of the Α-Al2o3 Substrates on the Quality of the GaN Films Grown by Pulsed Laser Deposition

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Epitaxial Growth Mechanism of Pulsed Laser Deposited AlN Films on Si (111) Substrates

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Synthesis of High-Quality AlN Films on (la,sr) (al,ta)o3 Substrates by Pulsed Laser Deposition

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Elastic-Plastic Mechanical Properties of AlxGa1-xN Thin Films with High Al Composition