Epitaxial Growth Mechanism of Pulsed Laser Deposited AlN Films on Si (111) Substrates

Hui Yang,Wenliang Wang,Zuolian Liu,Weijiang Yang,Guoqiang Li

DOI: https://doi.org/10.1039/c3ce42378f

IF: 3.756

2014-01-01

CrystEngComm

Abstract:The epitaxial growth mechanism and causes of dislocation formation in AlN films on a Si substrate by pulsed laser deposition (PLD) are comprehensively proposed.

What problem does this paper attempt to address?

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Wenliang Wang,Weijia Yang,Zuolian Liu,Haiyan Wang,Lei Wen,Guoqiang Li

DOI: https://doi.org/10.1038/srep11480

IF: 4.6

2015-01-01

Scientific Reports

Abstract:High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates.
Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

haiyan wang,wenliang wang,weijia yang,shizhong zhou,zhiting lin,guoqiang li

DOI: https://doi.org/10.1063/1.4919912

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The similar to 2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of similar to 120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices. (c) 2015 AIP Publishing LLC.
Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Hui Yang,Wenliang Wang,Zuolian Liu,Guoqiang Li

DOI: https://doi.org/10.1039/c3ce40886h

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by pulsed laser deposition (PLD). By optimising the laser rastering and PLD growth conditions, the 2 inch-diameter single-crystalline AlN films exhibit excellent thickness uniformity with a root-mean-square (RMS) inhomogeneity of less than 3.6% and a very smooth surface with a RMS roughness of 1.4 nm. There is a 1.5 nm-thick interfacial layer between the as-grown AlN films and Si substrates, which is confirmed by HRTEM and a GIXR simulation, and the as-grown AlN films are almost fully relaxed with only 0.3% in-plane tensile strain. The achievement of high-quality and crack-free AlN films with a uniform thickness and abrupt interface on 2 inch Si (111) substrates is of great interest for AlN-based devices, particularly acoustic filters, where abrupt heterointerfaces with the substrates and flat surfaces of AlN films are highly desired.
Epitaxial Growth of High Quality AlN Films on Si Substrates

Meijuan Yang,Wenliang Wang,Yunhao Lin,Weijia Yang,Guoqiang Li

DOI: https://doi.org/10.1016/j.matlet.2016.07.003

IF: 3

2016-01-01

Materials Letters

Abstract:Quality-enhanced AlN epitaxial films on Si substrates with Al buffer layer have been grown by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is deployed to grow Al buffer layer at first, and PLD is used to grow AlN epitaxial films on the Al buffer layer. It is found that as the increase in the growth temperature, the property of as-grown ~300nm-thick AlN epitaxial films is first increased and then decreased, and shows an optimized value at 750°C. The as-grown ~300nm-thick AlN epitaxial films grown at 750°C show full-width at half-maximums of AlN (0002) and AlN () of 0.45° and 0.80°, respectively, a root-mean-square surface roughness of 1.4nm. This work provides an effective approach for the growth of high-quality AlN epitaxial films on Si substrates for the future application of AlN-based devices.
Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Wenliang Wang,Weijia Yang,Yunhao Lin,Shizhong Zhou,Guoqiang Li

DOI: https://doi.org/10.1038/srep16453

IF: 4.6

2015-01-01

Scientific Reports

Abstract:2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(10 2) X-ray rocking curves of 0.7° and 0.8°, respectively and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.
Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

wenliang wang,weijia yang,zuolian liu,yunhao lin,shizhong zhou,huirong qian,haiyan wang,zhiting lin,guoqiang li

DOI: https://doi.org/10.1039/c4ra03581j

IF: 4.036

2014-01-01

RSC Advances

Abstract:Single-crystalline AlN films have been grown on metallic nickel (Ni) substrates by pulsed laser deposition with an in-plane epitaxial relationship of AlN[11(2)over bar0]//Ni[1(1)over bar0]. The as-grown AlN films reveal that a very smooth AlN film surface with a root-mean-square roughness of 1.0 nm has been obtained, and there is no interfacial layer existing between the AlN films and the Ni (111) substrates. Furthermore, with the increase in the growth temperature, the surface morphologies, crystalline qualities, and interfacial properties of as-grown AlN films gradually deteriorate. The as-grown about 300 nm-thick AlN films are almost fully relaxed only with an in-plane compressive strain of 0.67%. This work has potential in applications of AlN-based devices which require abrupt hetero-interfaces and flat films surfaces.
Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Wenliang Wang,Huirong Qian,Weijia Yang,Haiyan Wang,Yunnong Zhu,Guoqiang Li

DOI: https://doi.org/10.1016/j.jallcom.2015.05.032

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:AlN films have been grown on nitrided and non-nitrided Al substrates by pulsed laser deposition (PLD) technology at 450 degrees C. The surface morphology, crystalline quality, and interfacial property of the as-grown AlN films on nitrided and non-nitrided Al substrates have been investigated systematically. It is found that the as-grown similar to 300 nm-thick AlN films on nitrided Al substrates show the very smooth surface with a root-mean-square (RMS) surface roughness of 1.5 nm, high crystalline quality with full-width at half-maximum (FWHM) values for AlN(0002) and AlN(10-12) X-ray rocking curves (XRCs) of 0.6 degrees and 0.9 degrees, and sharp and abrupt interfaces. These results are in striking contrast to those of similar to 300 nm-thick AlN films grown on non-nitrided Al substrates. The as-grown similar to 300 nm-thick AlN films on non-nitrided Al substrates show relatively rough surface with a RMS surface roughness of 4.0 nm, poor crystalline quality with FWHM values for AlN(0002) and AlN(10-12) XRCs of 1.1 degrees and 1.5 degrees, and a nm-thick interfacial layer. Based on the characterizations, the effect of Al substrates nitridation and the growth mechanism of AlN films grown on nitrided Al substrates by PLD are hence proposed. This work provides an effective approach for the growth of high-quality AlN films on Al substrates for the future application of AlN-based devices. (C) 2015 Elsevier B.V. All rights reserved.
Effect of Target–substrate Distance on the Quality of AlN Films Grown on Si(110) Substrates by Pulsed Laser Deposition

Weijia Yang,Wenliang Wang,Yunhao Lin,Shizhong Zhou,Ying Liu,Guoqiang Li

DOI: https://doi.org/10.1016/j.matlet.2015.07.069

IF: 3

2015-01-01

Materials Letters

Abstract:Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition (PLD) is carefully studied. It is found that the quality of AlN films is firstly improved and then is deteriorated as the target–substrate distance increases from 5 to 10cm, and we find that 8cm is the appropriate target–substrate distance for achieving high-quality AlN films on Si(110) substrates by PLD. The as-grown ~400nm-thick AlN films show flat surface with a root-mean-square surface roughness of 1.8nm. Meanwhile, there is no interfacial layer existing in the AlN/Si(110) interface. This work is paramount importance for the fabrication of AlN-based devices on Si(110) substrates by PLD.
Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Wenliang Wang,Weijia Yang,Zuolian Liu,Yunhao Lin,Shizhong Zhou,Huirong Qian,Fangliang Gao,Guoqiang Li

DOI: https://doi.org/10.1039/c4ce00064a

IF: 3.756

2014-01-01

CrystEngComm

Abstract:AIN (0001) epitaxial films have been grown on Al (111) substrates with an in-plane epitaxial relationship of AlN[11 (2) over bar0]//Al[1 (1) over bar0] by pulsed laser deposition. The as-grown AlN films grown at 450 degrees C exhibited a very smooth and flat surface with a surface root-mean-square roughness less than 1.1 nm. There is no interfacial layer existing between AlN films and Al substrates, indicating an abrupt interface. The as-grown similar to 302 nm thick AlN films are almost fully relaxed only with an in-plane compressive strain of 0.16%. With the increase in growth temperature, the interfacial layer thickness increases, resulting in the degradation in the crystalline quality of the as-grown AlN films. These AlN films are of great interest for the commercial development of AlN-based devices.
Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Wenliang Wang,Yulin Zheng,Xiuye Zhang,Yuan Li,Zhenya Lu,Guoqiang Li

DOI: https://doi.org/10.1039/c7ce01995e

IF: 3.756

2018-01-01

CrystEngComm

Abstract:The epitaxial structures of GaN films grown on AlN/Al heterostructures by pulsed laser deposition (PLD) are designed with and without an amorphous AlN layer, and quality-enhanced crack-free GaN epitaxial films are obtained.
Epitaxial Growth of 2 Inch Diameter Homogeneous Aln Single-Crystalline Films by Pulsed Laser Deposition

Hui Yang,Wenliang Wang,Zuolian Liu,Guoqiang Li

DOI: https://doi.org/10.1088/0022-3727/46/10/105101

2013-01-01

Abstract:2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Mingtao Nong,Che-Hao Liao,Xiao Tang,Haicheng Cao,Tingang Liu,Patsy A. Miranda Cortez,Dhanu Chettri,Glen Isaac Maciel García,Xiaohang Li

DOI: https://doi.org/10.1063/5.0207884

IF: 4

2024-04-22

Applied Physics Letters

Abstract:This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free AlN epilayer with a thickness of 500 nm was acquired. The x-ray diffraction rocking curves of AlN (002) and (102) exhibited full width at half maximum values of 0.22° and 0.36°, respectively. Atomic force microscopy image analysis showed that after the introduction of TEB, larger grains appeared on the surface of Si(111) substrate, promoting the 3D growth pattern of the subsequent AlN buffer layer. Laytec reflection curves depicted the morphological transition from 3D to 2D growth mode during AlN deposition. At the same time, the curvature value was significantly reduced by 20 km−1, and the Raman spectrum peak of E2(high) shifted from 648.7 to 652.5 cm−1, indicating that the surface tensile stress was greatly reduced, effectively suppressing the crack problem of AlN on Si(111).

physics, applied
Control of Interfacial Reactions for the Growth of High-Quality AlN Epitaxial Films on Cu(111) Substrates

Wenliang Wang,Yulin Zheng,Yuan Li,Xiaochan Li,Liegen Huang,Zhuoran Li,Zhenya Lu,Guoqiang Li

DOI: https://doi.org/10.1039/c7ce01803g

IF: 3.756

2017-01-01

CrystEngComm

Abstract:High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.
Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

W. Liu,J. J. Zhu,S. Jiang,H. Yang,J. F. Wang

DOI: https://doi.org/10.1063/1.2430396

IF: 4

2007-01-01

Applied Physics Letters

Abstract:The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN interlayer surface and the threading dislocations generated in the AlN interlayer have a significant influence on this strain evolution process. The dislocations generated in AlN interlayer may thread across the interface and play a key role in the strain evolution process of the GaN layer grown on AlN interlayer.
Epitaxial Growth of Homogeneous Single-Crystalline Aln Films on Single-Crystalline Cu (111) Substrates

Wenliang Wang,Weijia Yang,Zuolian Liu,Yunhao Lin,Shizhong Zhou,Huirong Qian,Fangliang Gao,Hui Yang,Guoqiang Li

DOI: https://doi.org/10.1016/j.apsusc.2013.12.179

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (111) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (111) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (111) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within similar to 321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes. (C) 2014 Elsevier B. V. All rights reserved.
Highly Oriented AlN Thin Films Grown on Si(100) Substrates at Room Temperature by Pulsed Laser Deposition

LV Lei,LI Qing-shan,LI Li,ZHANG Li-chun,QI Hong-xia,WANG Cai-feng,ZHENG Meng-meng

DOI: https://doi.org/10.3321/j.issn:1005-0086.2007.10.019

2007-01-01

Abstract:Highly oriented AlN films were fabricated on p-Si(100) substrates at room temperature by pulsed laser deposition(PLD),and the effect of N2 pressure on the quality of the films was studied by XRD,FTIR and SEM investigations.The results show that all films deposited over a large range of N2 pressures from 5×10-6 Pa to 5.0 Pa exhibit good crystal properties with sharp X-ray diffraction peaks at 2θ=33.15°,corresponding to AlN h100 crsytalline orientation.The crystallinity of the films gets remarkably better when the N2 pressure rises from 5×10-6 Pa to 5.0 Pa.Furthermore,the combination of A1-N bond is strengthened when the density of N2 increases,but the surface morphology of the films get rougher.
Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition

Jipo Huang,Lianwei Wang,Jianxia Gao,Chenglu Lin,Yanping Zhou

DOI: https://doi.org/10.3321/j.issn:0258-7025.1999.09.012

1999-01-01

Abstract:The (101) oriented AlN thin films have been successfully grown on Si (111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 108Ω.
Epitaxial Growth and Its Mechanism of Gan Films on Nitrided Ligao2(001) Substrates by Pulsed Laser Deposition

Weijia Yang,Wenliang Wang,Zuolian Liu,Yunhao Lin,Shizhong Zhou,Huirong Qian,Guoqiang Li

DOI: https://doi.org/10.1039/c4ce01785d

IF: 3.756

2015-01-01

CrystEngComm

Abstract:High-quality GaN films have been grown on nitrided LiGaO2 substrates by pulsed laser deposition. The effect of nitridation on the properties of the GaN films and the growth mechanism of GaN films grown on nitrided LiGaO2 substrates by pulsed laser deposition have also been systemically studied.
Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Wang Jian-Feng,Zhang Bao-Shun,Zhang Ji-Cai,Zhu Jian-Jun,Wang Yu-Tian,Chen Jun,Liu Wei,Jiang De-Sheng,Yao Duan-Zheng,Yang Hui

DOI: https://doi.org/10.1088/0256-307x/23/9/067

2006-01-01

Chinese Physics Letters

Abstract:GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.
Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Hu Jiannan,Hao Zhibiao,Fan Ren,Zhang Chen,Luo Yi

DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.11.03

2012-01-01

Abstract:The AlN films were grown by radio frequency molecular beam epitaxy on sapphire substrate.The influence of the deposition conditions,such as the contents of Al and N,substrate temperature,and deposition rate,on the formation of defects,including dislocations,point defects in the epi-layers,was evaluated.The results show that the Al content and substrate temperature strongly affects the defect formation.For instance,under Al rich growth condition,a small increase of the substrate temperature resulted in lower dislocation density,accompanied by higher density of oxygen point defects.We found that the two dimension growth mode under Al rich growth condition considerably reduced the Al-vacancy and N-vacancy,possibly because of enhanced surface migration of both Al and N atoms.However,elimination of the N-vacancy was found to be more difficult than removal of the Al-vacancy.

Epitaxial Growth Mechanism of Pulsed Laser Deposited AlN Films on Si (111) Substrates

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Epitaxial Growth of High Quality AlN Films on Si Substrates

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Effect of Target–substrate Distance on the Quality of AlN Films Grown on Si(110) Substrates by Pulsed Laser Deposition

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Epitaxial Growth of 2 Inch Diameter Homogeneous Aln Single-Crystalline Films by Pulsed Laser Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Control of Interfacial Reactions for the Growth of High-Quality AlN Epitaxial Films on Cu(111) Substrates

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Epitaxial Growth of Homogeneous Single-Crystalline Aln Films on Single-Crystalline Cu (111) Substrates

Highly Oriented AlN Thin Films Grown on Si(100) Substrates at Room Temperature by Pulsed Laser Deposition

Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition

Epitaxial Growth and Its Mechanism of Gan Films on Nitrided Ligao2(001) Substrates by Pulsed Laser Deposition

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy