Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Effect of Pluse Buffer Layer on AlN Epilayer Dislocation Density

Reduction in Threading Dislocation Densities in Aln Epilayer by Introducing A Pulsed Atomic-Layer Epitaxial Buffer Layer

Microstructure and Influence of Buffer Layer on Threading Dislocations in (0001) AlN/sapphire Grown by Hydride Vapor Phase Epitaxy

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

The influence of AlN buffer layer thickness on the properties of GaN epilayer

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

The Influence of Aln Buffer Layer Thickness Grown by Pulsed Atomic Layer Epitaxy on the Properties of Gan Epilayer

Effect Of An Aln Buffer Layer On The Epitaxial Growth Of Inn By Molecular-Beam Epitaxy

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Two Coexisting Mechanisms Of Dislocation Reduction In An Algan Layer Grown Using A Thin Gan Interlayer

Al diffusion in GaN buffer layer during the growth of GaN film

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates