Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Two Coexisting Mechanisms Of Dislocation Reduction In An Algan Layer Grown Using A Thin Gan Interlayer

Reduction of Threading Dislocations in AlGaN Layers Grown on AlN∕sapphire Templates Using High-Temperature GaN Interlayer

Dislocation Behavior in Algan/Gan Multiple Quantum-Well Films Grown with Different Interlayers

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Reduction in Threading Dislocation Densities in Aln Epilayer by Introducing A Pulsed Atomic-Layer Epitaxial Buffer Layer

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Influence of Aln Thickness on Strain Evolution of Gan Layer Grown on High-Temperature Aln Interlayer

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Effect of Pluse Buffer Layer on AlN Epilayer Dislocation Density

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Reduction Of Tensile Stress In Gan Grown On Si(111) By Inserting A Low-Temperature Aln Interlayer

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures