Abstract:A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Simultaneous Determination of Tensile and Shear Strains of Crystalline Bilayers Using Three Bragg Reflections of X-rays

Conversion of strain state from biaxial to uniaxial in strained silicon

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Metrology of Sub-0.5 Mu M Silicon Epitaxial Films

Spin-dependent optical properties in strained silicon and germanium