Abstract:The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as transmission electron microscopy or high-resolution X-ray diffraction, which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular μ-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. μ-Raman provides insight into strain values and distributions of strained layers with different thicknesses and germanium concentrations, but its lateral resolution is constrained by the Abbe diffraction limit. TERS, on the other hand, emerges as a powerful non-destructive technique capable of overcoming diffraction limits by exploiting the combination of an atomic force microscope with a Raman spectrometer. This breakthrough makes it possible to estimate the chemical composition and induced strain in the lattice by evaluating the Raman peak position shifts in strained and unstrained silicon layers, providing crucial insights for nanoscale strain control. In particular, this paper focuses on the TERS characterization of Si 0.7 Ge 0.3 epitaxial layers grown on a silicon-on-insulator device, demonstrating the effectiveness of this technique and the high lateral resolution that can be achieved.

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Conversion of strain state from biaxial to uniaxial in strained silicon

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H

Micro-Raman Spectroscopic Study of Two-Dimensional Stress Distribution in Poly-Si Induced by Patterns

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Composition and stress analysis in Si structures using micro-raman spectroscopy

The resolution and repeatability of stress measurement by Raman and EBSD in silicon

Analysing the linearised radially polarised light source for improved precision in strain measurement using micro-Raman spectroscopy

Stress measurements in silicon photonics by integrated Raman spectroscopy

Strain analysis of multiferroic BiFeO3-CoFe2O4 nanostructures by Raman scattering

Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (∊044) and tilt of suspended monolithic silicon nanowire structures