Abstract:Stress is a key to controlling the electro-optical properties of semiconductor devices based on strain engineering. Micro-Raman spectroscopy is regarded as an effective technique of non-destructive measurement for the stress in semiconductor material. What the results using traditional Raman methods, however, are usually the sum of in-plane principal stress, or some form of equivalent stress, on a specific crystal plane. It is regarded far from possible to detect any stress components using Raman on a random crystal plane. This work presented a method of stress analysis based on angle-resolved oblique backscattering micro-Raman spectroscopy. A general physical-mechanical model was proposed by solving the equation of lattice dynamics in the sample coordinate system and then performing Raman selection in the eigenvector coordinate system. Using this model and considering the factors including refraction, polarization diversion, and numerical aperture (NA), this work established the analytic relationship between the increment of polarized Raman shift and all the stress components on a random crystal plane (taking {100} plane of monocrystalline silicon as an example) under any stress state. The stress component results of verification experiments quite agreed with their corresponding theoretical resolutions. It proved that the proposed method based on angle-resolved oblique backscattering micro-Raman spectroscopy, including both the model and the device, solved the widely recognized problem that the stress components of monocrystalline silicon, especially on {100} crystal plane, could not be decoupled by Raman.

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Polarized Raman Spectroscopy Clarifies the Effect of Crystal Anisotropy on Elastic Stress Fields Developed on the Surface of Silicon Single‐crystal

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Mechanical investigations of free-standing SiN membranes patterned with one-dimensional photonic crystal structures

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Nanomechanical spectroscopy of ultrathin silicon nitride suspended membranes

Tensor‐resolved Stress Analysis in Silicon MEMS Device by Polarized Raman Spectroscopy

Stress Dependence of Optically Active Diamagnetic Point Defects in Silicon Oxynitride

Tensor and Spatially Resolved Analysis of Microscopic Stress Fields in Polycrystalline Alumina by Polarized Raman Spectroscopy

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

Optomechanical characterization of silicon nitride membrane arrays

Theoretical investigation of piezo-optic effect in photonic crystal nanocavity for nanostrain detection

Micro-Raman Spectroscopy Analysis of Residual Stress in Polysilicon MEMS Resonators

Stress Dependence Of The Polarized Raman Spectrum Of Polycrystalline Lead Zirconate Titanate

Validating Raman Spectroscopic Calibrations of Phonon Deformation Potentials in Silicon Single Crystals: A Comparison Between Ball-on-ring and Micro-Indentation Methods

Analysis of photoelastic properties of monocrystalline silicon

Challenging Nano-Scale Stress Evaluation in Glassy and Crystalline Semiconductor Heterostructures

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Phonon Polariton-assisted Infrared Nanoimaging of Local Strain in Hexagonal Boron Nitride