Abstract:Stress is a key to controlling the electro-optical properties of semiconductor devices based on strain engineering. Micro-Raman spectroscopy is regarded as an effective technique of non-destructive measurement for the stress in semiconductor material. What the results using traditional Raman methods, however, are usually the sum of in-plane principal stress, or some form of equivalent stress, on a specific crystal plane. It is regarded far from possible to detect any stress components using Raman on a random crystal plane. This work presented a method of stress analysis based on angle-resolved oblique backscattering micro-Raman spectroscopy. A general physical-mechanical model was proposed by solving the equation of lattice dynamics in the sample coordinate system and then performing Raman selection in the eigenvector coordinate system. Using this model and considering the factors including refraction, polarization diversion, and numerical aperture (NA), this work established the analytic relationship between the increment of polarized Raman shift and all the stress components on a random crystal plane (taking {100} plane of monocrystalline silicon as an example) under any stress state. The stress component results of verification experiments quite agreed with their corresponding theoretical resolutions. It proved that the proposed method based on angle-resolved oblique backscattering micro-Raman spectroscopy, including both the model and the device, solved the widely recognized problem that the stress components of monocrystalline silicon, especially on {100} crystal plane, could not be decoupled by Raman.

Measuring Stress Birefringence in Small Si Samples

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

Measurement of stress-induced birefringence in glasses based on reflective laser feedback effect

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

The resolution and repeatability of stress measurement by Raman and EBSD in silicon

Measurement of small birefringence in PI of liquid-crystal

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Micro-Raman spectroscopy measurement of stress in silicon

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

A new method for high resolution curvature measurement applied to stress monitoring in thin films

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

A Micro-Scale Strain Rosette for Residual Stress Measurement by SEM Moiré Method

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Laser-Inscribed Stress-Induced Birefringence of Sapphire.

Internal Stress Measurement by Laser Feedback Method