Abstract:Stress is a key to controlling the electro-optical properties of semiconductor devices based on strain engineering. Micro-Raman spectroscopy is regarded as an effective technique of non-destructive measurement for the stress in semiconductor material. What the results using traditional Raman methods, however, are usually the sum of in-plane principal stress, or some form of equivalent stress, on a specific crystal plane. It is regarded far from possible to detect any stress components using Raman on a random crystal plane. This work presented a method of stress analysis based on angle-resolved oblique backscattering micro-Raman spectroscopy. A general physical-mechanical model was proposed by solving the equation of lattice dynamics in the sample coordinate system and then performing Raman selection in the eigenvector coordinate system. Using this model and considering the factors including refraction, polarization diversion, and numerical aperture (NA), this work established the analytic relationship between the increment of polarized Raman shift and all the stress components on a random crystal plane (taking {100} plane of monocrystalline silicon as an example) under any stress state. The stress component results of verification experiments quite agreed with their corresponding theoretical resolutions. It proved that the proposed method based on angle-resolved oblique backscattering micro-Raman spectroscopy, including both the model and the device, solved the widely recognized problem that the stress components of monocrystalline silicon, especially on {100} crystal plane, could not be decoupled by Raman.

The resolution and repeatability of stress measurement by Raman and EBSD in silicon

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Micro-Raman spectroscopy measurement of stress in silicon

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Measurement of Young's modulus and residual stress of silicon microstructures

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Measurement of Residual Stress in a Multi-Layer Semiconductor Heterostructure by Micro-Raman Spectroscopy

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H

Measuring Stress Birefringence in Small Si Samples

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Raman Online Measurement of Stress Resulting from Micromachining

Micro-Raman Stress Characterization of Crystalline Si as a Function of the Lithiation State

Measurements of Residual Stresses in Al Film/silicon Nitride Substrate Microcantilever Beam Systems

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Characterization of the Young's Modulus and Residual Stresses for a Sputtered Silicon Oxynitride Film Using Micro-Structures