Abstract:Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

Stress-Dependent Optical Extinction in LPCVD Silicon Nitride Measured by Nanomechanical Photothermal Sensing

Stress-Dependent Optical Extinction in Low-Pressure Chemical Vapor Deposition Silicon Nitride Measured by Nanomechanical Photothermal Sensing

Sub-ppm Nanomechanical Absorption Spectroscopy of Silicon Nitride

Internal Stress Measurement of LPCVD Silicon Nitride Deposited on Different Substrates

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Overcoming stress limitations in SiN nonlinear photonics via a bilayer waveguide

Stress measurements in silicon photonics by integrated Raman spectroscopy

Thermal transport and frequency response of localized modes on low-stress nanomechanical silicon nitride drums featuring a phononic bandgap structure

NV microscopy of thermally controlled stresses caused by Cr$_2$O$_3$ thin films

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Laser-Excited Elastic Guided Waves Reveal the Complex Mechanics of Nanoporous Silicon

Mechanical investigations of free-standing SiN membranes patterned with one-dimensional photonic crystal structures

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Nanomechanical spectroscopy of ultrathin silicon nitride suspended membranes

Strain modulation in crumpled Si nanomembranes: Light detection beyond the Si absorption limit

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress