Abstract:Recently, the negatively charged nitrogen-vacancy (NV) center has emerged as a robust and versatile quantum sensor in pressurized environments. There are two popular ways to implement NV sensing in a diamond anvil cell (DAC), which is a conventional workhorse in the high-pressure community: create implanted NV centers (INVs) at the diamond anvil tip or immerse NV-enriched nano-diamonds (NDs) in the pressure medium. Nonetheless, there are limited studies on comparing the local stress environments experienced by these sensor types as well as their performances as pressure gauges. In this work, by probing the NV energy levels with the optically detected magnetic resonance (ODMR) method, we experimentally reveal a dramatic difference in the partially reconstructed stress tensors of INVs and NDs incorporated in the same DAC. Our measurement results agree with computational simulations, concluding that INVs perceive a more non-hydrostatic environment dominated by a uniaxial stress along the DAC axis. This provides insights on the suitable choice of NV sensors for specific purposes and the stress distribution in a DAC. We further propose some possible methods, such as using NDs and nanopillars, to extend the maximum working pressure of quantum sensing based on ODMR spectroscopy, since the maximum working pressure could be restricted by non-hydrostaticity of the pressure environment. Moreover, we explore more sensing applications of the NV center by studying how pressure modifies different aspects of the NV system. We perform a photoluminescence study using both INVs and NDs to determine the pressure dependence of the zero-phonon line, which helps developing an all-optical pressure sensing protocol with the NV center. We also characterize the spin-lattice relaxation ($T_1$) time of INVs under pressure to lay a foundation for robust pulsed measurements with NV centers in pressurized environments.

Stress-Dependent Optical Extinction in Low-Pressure Chemical Vapor Deposition Silicon Nitride Measured by Nanomechanical Photothermal Sensing

Stress-Dependent Optical Extinction in LPCVD Silicon Nitride Measured by Nanomechanical Photothermal Sensing

Sub-ppm Nanomechanical Absorption Spectroscopy of Silicon Nitride

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

NV microscopy of thermally controlled stresses caused by Cr$_2$O$_3$ thin films

Anneal-free ultra-low loss silicon nitride integrated photonics

Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

Photothermally Assisted Thinning of Silicon Nitride Membranes for Ultrathin Asymmetric Nanopores.

Effect of oxygen plasma on nanomechanical silicon nitride resonators

Nanomechanical spectroscopy of ultrathin silicon nitride suspended membranes

Laser-Excited Elastic Guided Waves Reveal the Complex Mechanics of Nanoporous Silicon

Thermal transport and frequency response of localized modes on low-stress nanomechanical silicon nitride drums featuring a phononic bandgap structure

Nanomechanical Photothermal Near Infrared Spectromicroscopy of Individual Nanorods

Photothermal Commonpath Interferometry of Silicon Nitride Membranes for Laser Light Sails

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity

Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices

Optimizing nanostructure deposition process for optical applications

Strong broadband optical absorption in silicon nanowire films

Exploring extreme thermodynamics in nanoliter volumes through stimulated Brillouin-Mandelstam scattering