Abstract:Understanding the behavior of SiO 2 under different external conditions, particularly pressure, is essential for advancing its applications. While existing literature primarily focuses on the impact of isotropic stress on SiO 2 , there remains a gap in exploring the effects of uniaxial and biaxial stresses on its properties. This study aims to address this gap by investigating the novel effects of uniaxial, biaxial, and isotropic pressures on the opto-electrical properties of SiO 2 using first principles calculations. Our results reveal distinct structural adaptations of SiO 2 under different pressure conditions, demonstrating its anisotropic behavior. For example, under isotropic pressure in the interval [0.0, 12.5] GPa, the lattice parameters 5.039 < a < 4.615 Å, and 5.529 < c < 5.239 Å, and the unit cell volume ranged from 121.57 to 96.65 Å 3 show reductions in values, indicating structural compression in accordance with the experimentally found values. Additionally, we investigated the electrical properties, including the complex dielectric function and conductivity. At an isotropic pressure of 0 GPa, the real refractive index of SiO 2 is approximately n = 2.04083, which increases to n = 2.20836 at 12.5 GPa, while applying uniaxial or biaxial pressure resulted in direction-dependent-refractive index highlighting the crystal's anisotropic to external pressure. Also, our study revealed that the maximum values of conductivity increased while wavelength shift decreased as a function of the applied stress on the crystal. These findings provide valuable insights into the behavior of SiO 2 single crystal under directional stresses, facilitating the design of pressure-sensitive optoelectronic devices.

Analysis of photoelastic properties of monocrystalline silicon

Polarized Raman Spectroscopy Clarifies the Effect of Crystal Anisotropy on Elastic Stress Fields Developed on the Surface of Silicon Single‐crystal

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Photoelasticity of crystalline and amorphous silica from first principles

Integrated photoelasticity in a soft material: phase retardation, azimuthal angle and stress-optic coefficient

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Electrooptical effects in silicon

Exact and linearized refractive index stress-dependence in anisotropic photoelastic crystals

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Stress Dependence of Optically Active Diamagnetic Point Defects in Silicon Oxynitride

Optical and Electrical Properties of SiO2 under Uniaxial, Biaxial, and Isotropic Pressure: a First Principles Study

Thermally induced depolarization in a silicon (c-Si) single crystal

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H

Stress Dependence of Paramagnetic Point Defects in Amorphous Silicon Oxide.

Challenging Nano-Scale Stress Evaluation in Glassy and Crystalline Semiconductor Heterostructures