Abstract:Stress is a key to controlling the electro-optical properties of semiconductor devices based on strain engineering. Micro-Raman spectroscopy is regarded as an effective technique of non-destructive measurement for the stress in semiconductor material. What the results using traditional Raman methods, however, are usually the sum of in-plane principal stress, or some form of equivalent stress, on a specific crystal plane. It is regarded far from possible to detect any stress components using Raman on a random crystal plane. This work presented a method of stress analysis based on angle-resolved oblique backscattering micro-Raman spectroscopy. A general physical-mechanical model was proposed by solving the equation of lattice dynamics in the sample coordinate system and then performing Raman selection in the eigenvector coordinate system. Using this model and considering the factors including refraction, polarization diversion, and numerical aperture (NA), this work established the analytic relationship between the increment of polarized Raman shift and all the stress components on a random crystal plane (taking {100} plane of monocrystalline silicon as an example) under any stress state. The stress component results of verification experiments quite agreed with their corresponding theoretical resolutions. It proved that the proposed method based on angle-resolved oblique backscattering micro-Raman spectroscopy, including both the model and the device, solved the widely recognized problem that the stress components of monocrystalline silicon, especially on {100} crystal plane, could not be decoupled by Raman.

Micro-Raman Spectroscopic Study of Two-Dimensional Stress Distribution in Poly-Si Induced by Patterns

Micro-Raman spectroscopy measurement of stress in silicon

Composition and stress analysis in Si structures using micro-raman spectroscopy

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

EXPERIMENTAL MICRO-RAMAN ANALYSIS OF RESIDUAL STRESS IN POLYSILICON FILMS

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Micro-Raman Spectroscopy Analysis of Residual Stress in Polysilicon MEMS Resonators

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Two-dimensional stress measurement of a micromachined piezoresistive structure with micro-Raman spectroscopy

Residual Stress Measurement and Analysis in Multilayer Film Si- Substrate Structure by Micro-Raman Spectroscopy Technique

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

Measurement of Residual Stress in a Multi-Layer Semiconductor Heterostructure by Micro-Raman Spectroscopy

Internal Stress‐Related Vibrational Splitting in Compressed SiO2

Micro-Raman Stress Characterization of Crystalline Si as a Function of the Lithiation State

A Stress Evaluation Approach for the Silicon with Nano-Tsvs by Raman Spectroscopy

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy