Abstract:In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro-scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman-stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro-scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman-stress detection technology. Raman spectroscopy relies on the principle of inelastic scattering of photons by substances, enabling nondestructive and fast detection of stress. A comprehensive review of Raman spectroscopy in characterizing residual stress within microelectronics manufacturing is presented, including basic principles, Raman-stress relation, wavelength selection, and specific applications, with the aim of advancing Raman spectroscopy as a stress characterization tool for microelectronics manufacturing. image

EXPERIMENTAL MICRO-RAMAN ANALYSIS OF RESIDUAL STRESS IN POLYSILICON FILMS

Micro-Raman Spectroscopy Analysis of Residual Stress in Polysilicon MEMS Resonators

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Residual Stress Measurement and Analysis in Multilayer Film Si- Substrate Structure by Micro-Raman Spectroscopy Technique

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

FATIGUE PROPERTY OF POLYSILICON THIN FILMS IN AMBIENT ENVIRONMENT

Micro-Raman Spectroscopic Study of Two-Dimensional Stress Distribution in Poly-Si Induced by Patterns

Micro-Raman spectroscopy measurement of stress in silicon

A Nondestructive Raman Spectra Stress 2D Analysis for the Pressure Sensor Sensitive Silicon Membrane

Residual Stress Characterization in Microelectronic Manufacturing: an Analysis Based on Raman Spectroscopy

Micromechanical Characterization of Polysilicon Films through On-Chip Tests

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

Study of techniques for measuring residual stress in micromachined films

Raman Online Measurement of Stress Resulting from Micromachining

Composition and stress analysis in Si structures using micro-raman spectroscopy

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Mechanical Characterization of Polysilicon MEMS: A Hybrid TMCMC/POD-Kriging Approach

Characterization of the Young's Modulus and Residual Stresses for a Sputtered Silicon Oxynitride Film Using Micro-Structures

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

An Out-Chip Method for Measuring Fatigue Property of Polysilicon Thin Film