Abstract:In an effort to explain the considerable variations in measured mechanical strength of polysilicon films doped with phosphorous for use in MEMS applications, the influence of the specimen manufacturing processes on the mechanical properties has been examined in connection with varying exposure to 49% hydrofluoric acid (HF). It was found that surface roughness as characterized by groove formation along grain boundaries depends on the HF release time. Surface undulations and crevasses related to grain structure result thus in reduced fracture strength and, in addition, induce errors into the determination of the effective elastic modulus—especially when the latter is determined from flexure configurations. Extensive exposure to HF results in pervasive material degradation, as evidenced by a transition from transgranular to intergranular fracture, and a correspondingly precipitous drop of the film strength with attendant increase in grain boundary material removal. Short times of exposure to HF can result in delamination of a thin surface layer, which is sufficient to initiate an “early” failure. Longer exposure allows HF permeation into the intergranular domains, degrading the body of the material significantly. On the other hand, tests on material from a different source that has undergone different doping and post-processing demonstrated a suppression of this degradation resulting in film strengths that are higher by a factor of two or more. Thus, consideration of additional influences of doping and electro-chemical phenomena during the HF wet release, in association with silicon-metal contacts, is necessary.

FATIGUE PROPERTY OF POLYSILICON THIN FILMS IN AMBIENT ENVIRONMENT

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Fatigue lifetime evaluation of polysilicon thin films by using cyclic loading with gradually increasing amplitude

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EXPERIMENTAL MICRO-RAMAN ANALYSIS OF RESIDUAL STRESS IN POLYSILICON FILMS

Fatigue Failure Types of the Conducting Polythiophene Thin Film on the Stainless Substrate

Evaluation of Mechanical Properties and Strain Criterion for Realibility Design of Micromachined Polysilicon Thin Films

MEASUREMENT OF THE FRACTURE PROPERTY OF POLYSILICON MICRO STRUCTURE

Fatigue-Induced Failure of Polysilicon MEMS: Nonlinear Reduced-Order Modeling and Geometry Optimization of On-Chip Testing Device

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Micromechanical Characterization of Polysilicon Films through On-Chip Tests

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Ultra-sensitive, Highly Reproducible Film Stress Characterization Using Flexible Suspended Thin Silicon Plates and Local Curvature Measurements

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Surface Roughness Effect on the Tensile Strength of Micromachined Polysilicon Films

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Automated High‐Throughput Fatigue Testing of Freestanding Thin Films

Scale Dependence of Tensile Strength of Micromachined Polysilicon MEMS Structures Due to Microstructural and Dimensional Constraints

Friction and fracture properties of polysilicon coated with self-assembled monolayers

The mechanical strength of polysilicon films: Part 1. The influence of fabrication governed surface conditions