Abstract:Understanding the behavior of SiO 2 under different external conditions, particularly pressure, is essential for advancing its applications. While existing literature primarily focuses on the impact of isotropic stress on SiO 2 , there remains a gap in exploring the effects of uniaxial and biaxial stresses on its properties. This study aims to address this gap by investigating the novel effects of uniaxial, biaxial, and isotropic pressures on the opto-electrical properties of SiO 2 using first principles calculations. Our results reveal distinct structural adaptations of SiO 2 under different pressure conditions, demonstrating its anisotropic behavior. For example, under isotropic pressure in the interval [0.0, 12.5] GPa, the lattice parameters 5.039 < a < 4.615 Å, and 5.529 < c < 5.239 Å, and the unit cell volume ranged from 121.57 to 96.65 Å 3 show reductions in values, indicating structural compression in accordance with the experimentally found values. Additionally, we investigated the electrical properties, including the complex dielectric function and conductivity. At an isotropic pressure of 0 GPa, the real refractive index of SiO 2 is approximately n = 2.04083, which increases to n = 2.20836 at 12.5 GPa, while applying uniaxial or biaxial pressure resulted in direction-dependent-refractive index highlighting the crystal's anisotropic to external pressure. Also, our study revealed that the maximum values of conductivity increased while wavelength shift decreased as a function of the applied stress on the crystal. These findings provide valuable insights into the behavior of SiO 2 single crystal under directional stresses, facilitating the design of pressure-sensitive optoelectronic devices.

Internal Stress‐Related Vibrational Splitting in Compressed SiO2

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Effect of Hexagonality on the Pressure-Dependent Lattice Dynamics of 4H-Sic

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

High-Pressure Vibrational Spectroscopy of Sulfur Dioxide

Synchrotron X-Ray Diffraction of Sio2 to Multimegabar Pressures

High-pressure Crystal Chemistry and Amorphization of Α-Quartz

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2

High-pressure Raman spectroscopy study of α-quartz-like Si1-xGexO2 solid solution

Molecular dynamics simulation of CaSiO3 perovskite on decompression and re-compression

High-pressure Dissociation of Selenium and Tellurium

High Pressure Raman Spectra of Silicone Oil

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Shifts and Splittings of Electron-Energy Levels of A-Centers in Silicon under Uniaxial-Stress

Raman Spectroscopy of SiO2 Glass at High Pressure.

High-Temperature Raman-Spectroscopy Of Sio2 And Geo2 Polymorphs - Anharmonicity And Thermodynamic Properties At High-Temperatures

Optical and Electrical Properties of SiO2 under Uniaxial, Biaxial, and Isotropic Pressure: a First Principles Study

Dynamic Mechanical Relaxation and Loss in the Incommensurate Phase of Quartz

Strain/order parameter coupling in the ferroelastic transition in dense SiO2

Effects of Uniaxial Stress on the Eo1-peak of Silicon

Lattice-Vibrations Of High-Pressure Sio2 Phases - Raman-Spectrum Of Synthetic Stishovite