Abstract:Stress is a key to controlling the electro-optical properties of semiconductor devices based on strain engineering. Micro-Raman spectroscopy is regarded as an effective technique of non-destructive measurement for the stress in semiconductor material. What the results using traditional Raman methods, however, are usually the sum of in-plane principal stress, or some form of equivalent stress, on a specific crystal plane. It is regarded far from possible to detect any stress components using Raman on a random crystal plane. This work presented a method of stress analysis based on angle-resolved oblique backscattering micro-Raman spectroscopy. A general physical-mechanical model was proposed by solving the equation of lattice dynamics in the sample coordinate system and then performing Raman selection in the eigenvector coordinate system. Using this model and considering the factors including refraction, polarization diversion, and numerical aperture (NA), this work established the analytic relationship between the increment of polarized Raman shift and all the stress components on a random crystal plane (taking {100} plane of monocrystalline silicon as an example) under any stress state. The stress component results of verification experiments quite agreed with their corresponding theoretical resolutions. It proved that the proposed method based on angle-resolved oblique backscattering micro-Raman spectroscopy, including both the model and the device, solved the widely recognized problem that the stress components of monocrystalline silicon, especially on {100} crystal plane, could not be decoupled by Raman.

Effects of Uniaxial Stress on the Eo1-peak of Silicon

Shifts and Splittings of Electron-Energy Levels of A-Centers in Silicon under Uniaxial-Stress

Internal Stress‐Related Vibrational Splitting in Compressed SiO2

Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Conversion of strain state from biaxial to uniaxial in strained silicon

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

The resolution and repeatability of stress measurement by Raman and EBSD in silicon

Analysis of photoelastic properties of monocrystalline silicon

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Measurement of Young's modulus and residual stress of silicon microstructures

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures