Abstract:Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D-3h WS2 monolayer and a centrosymmetric D-3d WS2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.

Simultaneous Determination of Tensile and Shear Strains of Crystalline Bilayers Using Three Bragg Reflections of X-rays

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Determination of Three-Dimensional Interfacial Strain — A Novel Method of Probing Interface Structure with X-ray Bragg-surface Diffraction

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Refinements for Bragg coherent X-ray diffraction imaging: Electron backscatter diffraction alignment and strain field computation

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Measuring Lattice Parameter of Iron Silicides Using X-Ray Bragg-surface Diffraction

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Universal Imaging Of Full Strain Tensor In 2d Crystals With Third-Harmonic Generation

Strain Mapping In Single-Layer 2D Crystals Via Raman Activity

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Automated indexing for texture and strain measurement with broad-bandpass x-ray microbeams

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

An algorithm for Bragg coherent x-ray diffractive imaging of highly strained nanocrystals

Strain at Native ${\rm SiO}_{2}/{\rm Si}(111)$ Interface Characterized by Strain-Scanning Second-Harmonic Generation

Splitting of X-ray Diffraction Peak in (ge:Sio2)/sio2 Multilayers

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice