Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach

Nonlinear Optical Properties of Si/SiNx Superlattice

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Tunable nonlinear optical properties in nanocrystalline Si/SiO 2 multilayers under femtosecond excitation

Optical Properties of Amorphous Si/Sio2 Superlattice

Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Third-order optical nonlinear properties of amorphous Si/SiO2 superlattices fabricated by magnetron sputtering

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Study on Non-linear Optical Properties of Nc-Si/sin_x MQW with Z-scan Method

Study on the Third-Order Nonlinear Enhancement of SiN Films

Temperature Dependent Optical Properties of Si Nanocrystals Embedded in SiO 2 Matrix

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range