Abstract:The elastic constants, core width and Peierls stress of 30° partial dislocation in germanium has been investigated based on the first-principles calculations and the improved Peierls–Nabarro model. Our results suggest that the predictions of lattice constant and elastic constants given by LDA are in better agreement with experiment results. While the lattice constant is overestimated at about 2.4% and most elastic constants are underestimated at about 20% by the GGA method. Furthermore, when the applied deformation is larger than 2%, the nonlinear elastic effects should be considered. And with the Lagrangian strains up to 8%, taking into account the third-order terms in the energy expansion is sufficient. Except the original γ—surface generally used before (given by the first-principles calculations directly), the effective γ—surface proposed by Kamimura et al. derived from the original one is also used to study the Peierls stress. The research results show that when the intrinsic−stacking−fault energy (ISFE) is very low relative to the unstable−stacking−fault energy (USFE), the difference between the original γ—surface and the effective γ—surface is inapparent and there is nearly no difference between the results of Peierls stresses calculated from these two kinds of γ—surfaces. As a result, the original γ—surface can be directly used to study the core width and Peierls stress when the ratio of ISFE to the USFE is small. Since the negligence of the discrete effect and the contribution of strain energy to the dislocation energy, the Peierls stress given by the classical Peierls–Nabarro model is about one order of magnitude larger than that given by the improved Peierls–Nabarro model. The result of Peierls stress estimated by the improved Peierls–Nabarro model agrees well with the 2~3 GPa reported in the book of Solid State Physics edited by F. Seitz and D. Turnbull.

Models of core reconstruction for the 90-degree partial dislocation in semiconductors

Atomic structure of dislocation kinks in silicon

Atomic structure of dislocations in silicon, germanium and diamond

Core-structure and lattice resistance of twinning dislocations in fcc metals

Structural and Electronic Properties of 90° Dislocations in Silicon Nanorods: A First-Principles Calculation

DFT modelling of the edge dislocation in 4H-SiC

Improvement of Nonlocal Peierls-Nabarro Models

Undissociated screw dislocations in silicon: calculations of core structure and energy

Atomic-scale studies of (a + c)-type dislocation dissociation in wurtzite GaN

The Third-Order Elastic Constants and Mechanical Properties of 30° Partial Dislocation in Germanium: A Study from the First-Principles Calculations and the Improved Peierls–Nabarro Model

Molecular Dynamics Study on the 60° Dislocation in Silicon

Atomic-scale studies of (a plus c)-type dislocation dissociation in wurtzite GaN

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

A Generalized Peierls-Nabarro Model for Curved Dislocations and Core Structures of Dislocation Loops in Al and Cu

Reaction Pathway Analysis for Differences in Motion Between C-core and Si-core Partial Dislocation in 3C-Sic

Atomically informed nonlocal semi-discrete variational Peierls-Nabarro model for planar core dislocations

Charge induced reconstruction of glide partial dislocations and electronic properties in GaN

A nonplanar Peierls-Nabarro model and its applications to dislocation cross-slip

Atomistic Modeling of Strain Distribution in Self-Assembled Interfacial Misfit Dislocation (IMF) Arrays in Highly Mismatched III–V Semiconductor Materials

Dynamics of quantum discommensurations in the Frenkel-Kontorova chain

Valence and core excitons in solids from velocity-gauge real-time TDDFT with range-separated hybrid functionals: An LCAO approach