Interface reconstruction and dislocation networks for a metal/alumina interface: an atomistic approach

Y Long,N X Chen
DOI: https://doi.org/10.1088/0953-8984/20/13/135005
2008-01-01
Abstract:Misfit dislocation is an important component of the semi-coherent interface. Usually, it forms a dislocation network as the strain concentration area on an interface and makes the other part coherent. This is the regular case, but there are also some exceptions. In this work, we show that the Ni/(Al(2)O(3)) Al interface has a reconstruction at the first monolayer of the metal side, which works as a transition layer between Ni and Al(2)O(3) lattices. Under these conditions, the misfit dislocation cannot be confirmed by drawing a Burgers circuit because the interface is incoherent. However, due to the lattice misfit, there are areas of strain concentration and areas without strain distributed on the interface plane. So, for describing this strain distribution, we again use the concept of a dislocation network but redefine it as the separate line between these two parts. As a result, we find that the dislocation network appears when the metal part is thicker than 12.4 angstrom, and it shrinks as the metal film grows, resulting in an ultimate structure with a mesh size of 28.1 angstrom.
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