Abstract:The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050degreesC in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050degreesC in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050degreesC anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050degreesC anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050degreesC anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

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Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Ion implantation associated defects in Si(100) and their annealing behavior studied by slow positron beams

Nitrogen-doped Czochralski silicon treated in rapid thermal process

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Effect of Nitrogen Doping on Denuded Zone Formed by Rapid Thermal Process in Czochralski Silicon Wafer

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer